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GT10J303 Dataheets PDF



Part Number GT10J303
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel IGBT
Datasheet GT10J303 DatasheetGT10J303 Datasheet (PDF)

www.DataSheet.co.kr GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS z Third-generation IGBT z Enhancement mode type z High speed z Low saturation voltage : tf = 0.30μs (Max.) (IC = 10A) : VCE (sat) = 2.7V (Max.) (IC = 10A) Unit: mm z FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector−Emitter Voltage Gate-Emitter Voltage Collector Current Emitte.

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