GT25Q301

GT25Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q301 High Power Switching Applications Motor Control Applications · · · · · The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 ±20 25 50 25 50 200 150 −55 to 150 Unit V V A Diode forward current A JEDEC JEITA ― ― 2-21F2C Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range W °C °C TOSHIBA Weight: 9.75 g (typ.) Equivalent Circuit Collector Gate Emitter 1 2003-01-28 GT25Q301 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Diode forward voltage Reverse recovery time Thermal resistance (IGBT) Thermal resistance (diode) tf toff VF trr Rth (j-c) Rth (j-c) IF = 25 A, VGE = 0 IF = 25 A, di/dt = −200 A/µs ― ― Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton Inductive load VCC = 600 V, IC = 25 A VGG = ±15 V, RG = 43 Ω (Note) ― ― ― ― ― ― 0.16 0.68 ― ― ― ― 0.32 ― 3.0 350 0.625 1.38 V ns °C/W °C/W Test Condition VGE = ±20 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 2.5 mA, VCE = 5 V ...