GT30J121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J121
High Power Switching Applications Fa...
GT30J121
TOSHIBA Insulated Gate Bipolar
Transistor Silicon N Channel IGBT
GT30J121
High Power Switching Applications Fast Switching Applications
Unit: mm
Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.)
: Eoff = 0.80 mJ (typ.) Low saturation voltage: VCE (sat) = 2.0 V (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage Gate-emitter voltage
Collector current
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
DC 1 ms
VCES VGES
IC ICP
PC
Tj Tstg
600
V
±20
V
30 A
60
170
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance
Symbol Rth (j-c)
Max 0.735
Un...