GT30J322
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J322
FOURTH-GENERATION IGBT CURRENT RESON...
GT30J322
TOSHIBA INSULATED GATE BIPOLAR
TRANSISTOR SILICON N CHANNEL IGBT
GT30J322
FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
z FRD included between emitter and collector
z Enhancement mode type
z High speed
: tf = 0.25μs (Typ.) (IC = 50A)
z Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Unit: mm
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage Gate−Emitter Voltage
Collector Current
Emitter−Collector Forward Current
Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range
DC 1ms DC 1ms
VCES VGES
IC ICP IF IFP
PC
Tj Tstg
600 ±20 30 100 30 60
75
150 −55 to 150
V V A
A
W °C °C
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliabil...
