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GT30J324 Dataheets PDF



Part Number GT30J324
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel IGBT
Datasheet GT30J324 DatasheetGT30J324 Datasheet (PDF)

GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) • Low saturation voltage: VCE (sat) = 2.0 V (typ.) • FRD included between emitter and collector Absolute Maximum Ratings (Ta = .

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GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) • Low saturation voltage: VCE (sat) = 2.0 V (typ.) • FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg Rating 600 ±20 30 60 30 60 170 150 −55 to 150 Unit V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.735 1.90 Unit °C/W °C/W Equivalent Circuit Marking Gate Collector Emitter TOSHIBA GT30J324 1 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2006-11-01 Electrical Characteristics (Ta = 25°C) GT30J324 Characteristics Symbol Test Condition Min Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Turn-on time Switching time Turn-off delay time Fall time Turn-off time Switching loss Turn-on switching loss Turn-off switching loss Peak forward voltage Reverse recovery time IGES ICES VGE (OFF) VCE (sat) Cies td (on) tr ton td (off) tf toff Eon VGE = ±20 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 3 mA, VCE = 5 V IC = 30 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Inductive Load VCC = 300 V, IC = 30 A VGG = +15 V, RG = 24 Ω (Note 1) (Note 2) ― ― 3.5 ― ― ― ― ― ― ― ― ― Eoff VF IF = 30 A, VGE = 0 trr IF = 30 A, di/dt = −100 A/μs ― ― ― Note 1: Switching time measurement circuit and input/output waveforms Typ. Max ― ― ― 2.0 4650 0.09 ±500 1.0 6.5 2.45 ― ― 0.07 ― 0.24 ― 0.30 ― 0.05 ― 0.43 ― 1.00 ― 0.80 ― ― 3.8 60 ― Unit nA mA V V pF μs mJ V ns −VGE IC RG L VCC VCE VGE 0 90% IC 90% 0 VCE 10% td (off) tf toff 10% 10% 90% 10% td (on) tr ton 10% Note 2: Switching loss measurement waveforms VGE 0 90% 10% IC 0 VCE Eoff 5% Eon 2 2006-11-01 Collector current IC (A) 60 Common emitter 50 Tc = 25°C IC – VCE 20 15 10 40 9 30 20 VGE = 8 V 10 0 012345 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) GT30J324 VCE – VGE 20 Common emitter Tc = −40°C 16 12 8 60 30 4 IC = 10 A 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Collector-emitter voltage VCE (V) VCE – VGE 20 Common emitter Tc = 25°C 16 12 8 30 60 4 IC = 10 A 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Collector-emitter voltage VCE (V) VCE – VGE 20 Common emitter Tc = 125°C 16 12 8 30 60 4 IC = 10 A 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) 60 Common emitter 50 VCE = 5 V IC – VGE 40 30 20 10 Tc = 125°C 0 04 25 −40 8 12 16 Gate-emitter voltage VGE (V) 20 Collector-emitter saturation voltage VCE (sat) (V) 4 Common emitter VGE = 15 V 3 VCE (sat) – Tc 60 2 30 IC = 10 A 1 0 −60 −20 20 60 100 140 Case temperature Tc (°C) 3 2006-11-01 Collector current IC (A) Switching time ton, tr, td (on) (μs) Switching time ton, tr, td (on) – RG 10 Common emitter VCC = 300 V VGG = 15 V 3 IC = 30 A : Tc = 25°C : Tc = 125°C 1 (Note 1) 0.3 0.1 0.03 0.01 1 ton td (on) tr 3 10 30 100 300 Gate resistance RG (Ω) 1000 Switching time ton, tr, td (on) (μs) GT30J324 Switching time ton, tr, td (on) – IC 3 Common emitter VCC = 300 V VGG = 15 V 1 RG = 24 Ω : Tc = 25°C : Tc = 125°C (Note 1) 0.3 ton 0.1 td (on) 0.03 tr 0.01 0 5 10 15 20 25 Collector current IC (A) 30 Switching time toff, tf, td (off) (μs) Switching time toff, tf, td (off) – RG 10 Common emitter VCC = 300 V VGG = 15 V 3 IC = 30 A : Tc = 25°C : Tc = 125°C 1 (Note 1) 0.3 toff td (off) 0.1 0.03 0.01 1 tf 3 10 30 100 300 Gate resistance RG (Ω) 1000 Switching time toff, tf, td (off) (μs) Switching time 10 3 1.


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