Document
GT30J324
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J324
High Power Switching Applications Fast Switching Applications
Unit: mm
• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage
Collector current
Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
DC 1 ms DC 1 ms
Symbol
VCES VGES
IC ICP IF IFM
PC
Tj Tstg
Rating
600 ±20 30 60 30 60
170
150 −55 to 150
Unit V V A
A
W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance (IGBT) Thermal resistance (diode)
Symbol
Rth (j-c) Rth (j-c)
Max 0.735 1.90
Unit °C/W °C/W
Equivalent Circuit
Marking
Gate
Collector Emitter
TOSHIBA
GT30J324
1
Part No. (or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2006-11-01
Electrical Characteristics (Ta = 25°C)
GT30J324
Characteristics
Symbol
Test Condition
Min
Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance
Turn-on delay time
Rise time
Turn-on time Switching time
Turn-off delay time
Fall time
Turn-off time
Switching loss
Turn-on switching loss
Turn-off switching loss
Peak forward voltage
Reverse recovery time
IGES ICES VGE (OFF) VCE (sat) Cies td (on)
tr ton td (off) tf toff
Eon
VGE = ±20 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 3 mA, VCE = 5 V IC = 30 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz
Inductive Load VCC = 300 V, IC = 30 A VGG = +15 V, RG = 24 Ω
(Note 1) (Note 2)
― ― 3.5 ― ― ― ― ― ― ― ―
―
Eoff
VF IF = 30 A, VGE = 0 trr IF = 30 A, di/dt = −100 A/μs
―
― ―
Note 1: Switching time measurement circuit and input/output waveforms
Typ. Max
― ― ― 2.0 4650 0.09
±500 1.0 6.5 2.45 ― ―
0.07 ―
0.24 ―
0.30 ―
0.05 ―
0.43 ―
1.00 ―
0.80 ―
― 3.8 60 ―
Unit nA mA V V pF
μs
mJ V ns
−VGE
IC RG
L VCC VCE
VGE 0
90%
IC 90%
0 VCE
10% td (off)
tf toff
10%
10%
90%
10% td (on)
tr ton
10%
Note 2: Switching loss measurement waveforms
VGE 0
90%
10%
IC 0 VCE
Eoff
5% Eon
2 2006-11-01
Collector current IC (A)
60 Common emitter
50 Tc = 25°C
IC – VCE
20 15
10
40 9 30
20 VGE = 8 V
10
0 012345
Collector-emitter voltage VCE (V)
Collector-emitter voltage VCE (V)
GT30J324
VCE – VGE
20 Common emitter Tc = −40°C
16
12
8 60
30 4
IC = 10 A 0 0 4 8 12 16 20
Gate-emitter voltage VGE (V)
Collector-emitter voltage VCE (V)
VCE – VGE
20 Common emitter Tc = 25°C
16
12
8 30 60
4 IC = 10 A
0 0 4 8 12 16 20
Gate-emitter voltage VGE (V)
Collector-emitter voltage VCE (V)
VCE – VGE
20 Common emitter Tc = 125°C
16
12
8 30 60
4 IC = 10 A
0 0 4 8 12 16 20
Gate-emitter voltage VGE (V)
60 Common emitter
50 VCE = 5 V
IC – VGE
40
30
20
10 Tc = 125°C
0 04
25
−40 8
12
16
Gate-emitter voltage VGE (V)
20
Collector-emitter saturation voltage VCE (sat) (V)
4 Common emitter VGE = 15 V
3
VCE (sat) – Tc
60
2 30 IC = 10 A
1
0 −60 −20
20
60 100 140
Case temperature Tc (°C)
3 2006-11-01
Collector current IC (A)
Switching time ton, tr, td (on) (μs)
Switching time ton, tr, td (on) – RG
10 Common emitter VCC = 300 V VGG = 15 V
3 IC = 30 A : Tc = 25°C : Tc = 125°C
1 (Note 1)
0.3 0.1 0.03 0.01
1
ton
td (on) tr
3 10 30 100 300
Gate resistance RG (Ω)
1000
Switching time ton, tr, td (on) (μs)
GT30J324
Switching time ton, tr, td (on) – IC
3 Common emitter
VCC = 300 V VGG = 15 V
1
RG = 24 Ω : Tc = 25°C
: Tc = 125°C
(Note 1)
0.3
ton
0.1 td (on)
0.03
tr
0.01 0
5
10 15 20
25
Collector current IC (A)
30
Switching time toff, tf, td (off) (μs)
Switching time toff, tf, td (off) – RG
10 Common emitter VCC = 300 V VGG = 15 V
3 IC = 30 A : Tc = 25°C : Tc = 125°C
1 (Note 1)
0.3 toff
td (off) 0.1
0.03 0.01
1
tf
3 10 30 100 300
Gate resistance RG (Ω)
1000
Switching time toff, tf, td (off) (μs)
Switching time
10
3
1.