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VMMK-2203 Dataheets PDF



Part Number VMMK-2203
Manufacturers AVAGO
Logo AVAGO
Description 0.9-11 GHz E-pHEMT Wideband Amplifier
Datasheet VMMK-2203 DatasheetVMMK-2203 Datasheet (PDF)

VMMK-2203 0.9-11 GHz E-pHEMT Wideband Amplifier in Wafer Level Package Data Sheet Description Avago Technologies has combined its industry leading E-pHEMT technology with a revolutionary wafer level package (WLP). The VMMK-2203 is an easy-to-use GaAs MMIC amplifier that offers excellent gain and noise figure from 0.9 to 11 GHz. The input and output are matched to 50 Ω so no external matching is needed. Bias is supplied through a simple external choke and DC blocking network. The wafer level pac.

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VMMK-2203 0.9-11 GHz E-pHEMT Wideband Amplifier in Wafer Level Package Data Sheet Description Avago Technologies has combined its industry leading E-pHEMT technology with a revolutionary wafer level package (WLP). The VMMK-2203 is an easy-to-use GaAs MMIC amplifier that offers excellent gain and noise figure from 0.9 to 11 GHz. The input and output are matched to 50 Ω so no external matching is needed. Bias is supplied through a simple external choke and DC blocking network. The wafer level package is small and ultra thin, yet can be handled and placed with standard 0402 pick and place assembly. This product is easy to use since it requires only a single positive DC voltage for bias and no matching coefficients are required for impedance matching to 50 Ω systems. WLP 0402, 1mm x 0.5mm x 0.25 mm DY Pin Connections (Top View) Input DY Output / Vdd Features • 1 x 0.5 mm Surface Mount Package • Ultrathin (0.25mm) • Gain Block • Ultra-wide Bandwidth • 5V Supply • RoHS6 + Halogen Free Specifications (6GHz, 5V, 25mA Typ.) • Noise Figure: 2.0dB typical • Associated Gain: 16.5dB • Output IP3: +14dBm • Output IP3: +5dBm Applications • Low Noise and Driver for Cellular/PCS and WCDMA Base Stations • 2.4 GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook computer, access point and mobile wireless applications • 802.16 & 802.20 BWA systems • WLL and MMDS Transceivers • Point-to-Point Radio • UWB • Antennas Input Amp Note: “D” = Device Code “Y” = Month Code Output / Vdd Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1A) Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Table 1. Absolute Maximum Ratings Sym Parameters/Condition Vd Supply Voltage (RF Output) [2] Id Device Current [2] Pin, max Pdiss Tch CW RF Input Power (RF Input) [3] Total Power Dissipation Max channel temperature TSTG Storage Temperature θjc Thermal Resistance [4] Notes 1. Operation of this device above any one of these parameters may cause permanent damage 2. Bias is assumed DC quiescent conditions 3. With the DC (typical bias) and RF applied to the device at board temperature Tb = 25°C 4. Thermal resistance is measured from junction to board using IR method Unit V mA dBm mW °C °C °C/W Absolute Max 10 50 mA +13 dBm 300 mW +150 +150 107 Table 2. DC and RF Specifications TA= 25°C, Frequency = 6 GHz, Vd = 5V, Id = 25mA, Zin = Zout = 50Ω (unless otherwise specified) Sym Parameters/Condition Unit Id Device Current mA NF[1] Noise Figure dB Ga [1] Associated Gain dB OIP3 [2,3] Output 3rd Order Intercept dBm Output P-1dB[2] Output Power at 1dB Gain Compression (Pin = 0dBm) dBm IRL [2] Input Return Loss dB ORL [2] Output Return Loss dB Notes: 1. Measure Data obtained using 300um G-S probe on production wafer 2. Measure Data obtained using 300um G-S-G probe on PCB substrate 3. OIP3 test condition: F1 = 6.0GHz, F2 = 6.01GHz, P.


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