Document
VMMK-2203 0.9-11 GHz E-pHEMT Wideband Amplifier in Wafer Level Package
Data Sheet
Description
Avago Technologies has combined its industry leading E-pHEMT technology with a revolutionary wafer level package (WLP). The VMMK-2203 is an easy-to-use GaAs MMIC amplifier that offers excellent gain and noise figure from 0.9 to 11 GHz. The input and output are matched to 50 Ω so no external matching is needed. Bias is supplied through a simple external choke and DC blocking network. The wafer level package is small and ultra thin, yet can be handled and placed with standard 0402 pick and place assembly. This product is easy to use since it requires only a single positive DC voltage for bias and no matching coefficients are required for impedance matching to 50 Ω systems. WLP 0402, 1mm x 0.5mm x 0.25 mm
DY
Pin Connections (Top View)
Input DY
Output / Vdd
Features
• 1 x 0.5 mm Surface Mount Package • Ultrathin (0.25mm) • Gain Block • Ultra-wide Bandwidth • 5V Supply • RoHS6 + Halogen Free
Specifications (6GHz, 5V, 25mA Typ.)
• Noise Figure: 2.0dB typical • Associated Gain: 16.5dB • Output IP3: +14dBm • Output IP3: +5dBm
Applications
• Low Noise and Driver for Cellular/PCS and WCDMA Base Stations
• 2.4 GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook computer, access point and mobile wireless applications
• 802.16 & 802.20 BWA systems • WLL and MMDS Transceivers • Point-to-Point Radio • UWB • Antennas
Input Amp Note: “D” = Device Code “Y” = Month Code
Output / Vdd
Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1A) Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control.
Table 1. Absolute Maximum Ratings
Sym Parameters/Condition
Vd Supply Voltage (RF Output) [2]
Id Device Current [2]
Pin, max Pdiss Tch
CW RF Input Power (RF Input) [3] Total Power Dissipation Max channel temperature
TSTG Storage Temperature θjc Thermal Resistance [4]
Notes 1. Operation of this device above any one of these parameters may cause permanent damage 2. Bias is assumed DC quiescent conditions 3. With the DC (typical bias) and RF applied to the device at board temperature Tb = 25°C 4. Thermal resistance is measured from junction to board using IR method
Unit V mA dBm mW °C °C °C/W
Absolute Max 10 50 mA +13 dBm 300 mW +150 +150 107
Table 2. DC and RF Specifications
TA= 25°C, Frequency = 6 GHz, Vd = 5V, Id = 25mA, Zin = Zout = 50Ω (unless otherwise specified)
Sym
Parameters/Condition
Unit
Id Device Current
mA
NF[1]
Noise Figure
dB
Ga [1]
Associated Gain
dB
OIP3 [2,3]
Output 3rd Order Intercept
dBm
Output P-1dB[2]
Output Power at 1dB Gain Compression (Pin = 0dBm)
dBm
IRL [2]
Input Return Loss
dB
ORL [2]
Output Return Loss
dB
Notes: 1. Measure Data obtained using 300um G-S probe on production wafer 2. Measure Data obtained using 300um G-S-G probe on PCB substrate 3. OIP3 test condition: F1 = 6.0GHz, F2 = 6.01GHz, P.