Document
STW11NK100Z
N-CHANNEL 1000V - 1.1Ω - 8.3A TO-247 Zener-Protected SuperMESH™Power MOSFET
TYPE
VDSS RDS(on)
ID
Pw
STW11NK100Z 1000 V < 1.38 Ω 8.3 A 230 W
s TYPICAL RDS(on) = 1.1 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING
REPEATIBILITY
3 2 1
TO-247
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES
ORDERING INFORMATION
SALES TYPE STW11NK100Z
MARKING W11NK100Z
PACKAGE TO-247
PACKAGING TUBE
December 2003
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STW11NK100Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
Tj Operating Junction Temperature Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD ≤ 8.3A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max Tl Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown Voltage
Test Conditions Igs=± 1mA (Open Drain)
Value 1000 1000 ± 30 8.3 5.2 33.2 230 1.85 6000 4.5
-55 to 150
Unit V V V A A A W
W/°C V
V/ns
°C
0.54 50 300
Max Value 8.3
550
°C/W °C/W
°C
Unit A
mJ
Min. 30
Typ.
Max.
Unit V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
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STW11NK100Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source Breakdown Voltage
ID = 1 mA, VGS = 0
1000
IDSS
Zero Gate Voltage Drain Current (VGS = 0)
VDS = Max Rating VDS = Max Rating, TC = 125 °C
1 50
IGSS
Gate-body Leakage Current (VDS = 0)
VGS = ± 20V
±10
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 100 µA
3 3.75 4.5
RDS(on)
Static Drain-source On Resistance
VGS = 10V, ID = 4.15 A
1.1 1.38
DYNAMIC
Symbol
gfs (1)
Ciss Coss Crss
Coss eq. (3)
td(on) tr
td(off) tf Qg
Qgs Qgd
Parameter
Forward Transconductance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Equivalent Output Capacitance
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Test Conditions VDS = 15 V, ID = 4.15 A VDS = 25V, f = 1 MHz, VGS = 0
Min.
VGS = 0V, VDS = 0V to 500V
VDD = 800 V, ID = 8 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3)
VDD = 800V, ID = 8 A, VGS = 10V
Typ. 9
3500 270 60
170
27 18 98 55
113 18 60
Max. 162
Unit V
µA µA µA
V Ω
Unit S pF pF pF
pF
ns ns ns ns nC nC nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD ISDM (2)
Source-drain Current Source-drain Current (pulsed)
8.3 33.2
A A
VSD (1) Forward On Voltage
ISD = 8.3 A, VGS = 0
1.6 V
trr Qrr IRRM
Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
ISD = 8 A, di/dt = 100 A/µs VDD = 80 V, Tj = 25°C (see test circuit, Figure 5)
560 ns 4.48 µC 16 A
trr Qrr IRRM
Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
ISD = 8 A, di/dt = 100 A/µs VDD = 80 V, Tj = 150°C (see test circuit, Figure 5)
620 ns 4.57 µC 16 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
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STW11NK100Z
Safe Operating Area
Thermal Impedance
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
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Gate Charge vs .