BUK9107-55ATE

BUK9107-55ATE N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Allows responsive temperature monitoring due to integrated temperature sensor „ Q101 compliant „ Electrostatically robust due to integrated protection diodes „ Low conduction losses due to low on-state resistance 1.3 Applications „ 12 V and 24 V high power motor drives „ Automotive and general purpose power switching „ Electrical Power Assisted Steering (EPAS) „ Protected drive for lamps 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 2 and 3 Tmb = 25 °C; see Figure 1 RDSon SF(TSD) drain-source on-state resistance VGS = 4.5 V; ID = 50 A; Tj = 25 °C VGS = 10 V; ID = 50 A; Tj = 25 °C VGS = 5 V; ID = 50 A; Tj = 25 °C; see Figure 7 and 8 temperature sense diode IF = 250 µA; Tj > -55 °C; Tj < 175 °C temperature coefficient VF(TSD) temperature sense diod...