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HSMP-3862 Dataheets PDF



Part Number HSMP-3862
Manufacturers AVAGO
Logo AVAGO
Description Surface Mount PIN Diodes
Datasheet HSMP-3862 DatasheetHSMP-3862 Datasheet (PDF)

HSMP-386x Surface Mount PIN Diodes Data Sheet Description/Applications The HSMP-386x series of general purpose PIN diodes are designed for two classes of applications. The first is attenuators where current consumption is the most important design consideration. The second application for this series of diodes is in switches where low capacitance is the driving issue for the designer. TRthheasetisrHteaSqnMuceiPre-(3Rg8Tu6)axararsenetrteiyeepsdicTpaoel trsafpol erCmcaiafpincaaccteii,toatnhnsec. .

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HSMP-386x Surface Mount PIN Diodes Data Sheet Description/Applications The HSMP-386x series of general purpose PIN diodes are designed for two classes of applications. The first is attenuators where current consumption is the most important design consideration. The second application for this series of diodes is in switches where low capacitance is the driving issue for the designer. TRthheasetisrHteaSqnMuceiPre-(3Rg8Tu6)axararsenetrteiyeepsdicTpaoel trsafpol erCmcaiafpincaaccteii,toatnhnsec. egFoe(CrneTa)rpaaplnlpidcuarTtpioootnsaesl HSMP-383x series is recommended. A SPICE model is not available for PIN diodes as SPICE does not provide for a key PIN diode characteristic, carrier lifetime. Pin Connections and Package Marking, SOT-363 16 25 Features • Unique Configurations in Surface Mount Packages – Add Flexibility – Save Board Space – Reduce Cost • Switching – Low Distortion Switching – Low Capacitance • Attenuating – Low Current Attenuating for Less Power Consumption • Matched Diodes for Consistent Performance • Better Thermal Conductivity for Higher Power Dissipation • Low Failure in Time (FIT) Rate[1] • Lead-free Note: 1. For more information see the Surface Mount PIN Reliability Data Sheet. LUx 34 Notes: 1. Package marking provides orientation, identification, and date code. 2. See “Electrical Specifications” for appropriate package marking. Package Lead Code Identification, SOT-23, SOT-143 (Top View) SINGLE SERIES #0 COMMON ANODE #2 COMMON CATHODE Package Lead Code Identification, SOT-323 (Top View) SINGLE SERIES B COMMON ANODE C COMMON CATHODE Package Lead Code Identification, SOT-363 (Top View) UNCONNECTED TRIO 654 123 L #3 RING QUAD 34 #4 EF 12 D See separate data sheet HSMP-386D Absolute Maximum Ratings[1] TC = +25°C Symbol Parameter If Forward Current (1 µs Pulse) PIV Peak Inverse Voltage Tj Junction Temperature Tstg Storage Temperature qjc Thermal Resistance[2] Unit Amp V °C °C °C/W SOT-23 1 50 150 -65 to 150 500 SOT-323 1 50 150 -65 to 150 150 ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge. Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. TthCe=c+ir2c5u°iCt ,bwoahredr.e TC is defined to be the temperature at the package pins where contact is made to Electrical Specifications TC = 25°C, each diode PIN General Purpose Diodes, Typical Specifications TA = 25°C Package Part Number Marking Lead HSMP- Code Code Configuration 3860 3862 3863 3864 386B 386C 386E 386F 386L L0 L2 L3 L4 L0 L2 L3 L4 LL 0 Single 2 Series 3 Common Anode 4 Common Cathode B Single C Series E Common Anode F Common Cathode L Unconnected Trio    Test Conditions Minimum Typical Breakdown Series Resistance Voltage VBR (V) RS (Ω) 50 3.0 /1.5* Typical Total Capacitance CT (pF) 0.20 MVeR a=sVuBrRe IR ≤ 10 µA f I=F =10100 mA MHz IF = 100 mA* fV=R = 1 50 V MHz 2 HSMP-386x Typical Parameters at TC = 25°C Part Number HSMP- Total Resistance RT (Ω) 386x 22 Carrier Lifetime t (ns) 500     Te st Conditio ns f =IF 1=010mMAH z TIRF == 25500mmAA Reverse Recovery Time Trr (ns) 80 90I%FV=R R=2e01c0omvVAe r y Total Capacitance CT (pF) 0.20 fV=R = 1 50 V MHz TOTAL CAPACITANCE (pF) Typical Performance, TC = 25°C, each diode 0.35 1000 RESISTANCE (OHMS) 0.30 0.25 1 MHz 100 MHz 0.20 1 GHz 100 10 TA = +85 C TA = +25 C TA = –55 C 0.15 0 2 4 6 8 10 12 14 16 18 20 REVERSE VOLTAGE (V) Figure 1. RF Capacitance vs. Reverse Bias. 1 0.01 0.1 1 10 100 BIAS CURRENT (mA) Figure 2. Typical RF Resistance vs. Forward Bias Current. INPUT INTERCEPT POINT (dBm) 120 Diode Mounted as a 115 Series Switch in a 50 Microstrip and 110 Tested at 123 MHz 105 100 95 90 85 1 10 30 IF – FORWARD BIAS CURRENT (mA) Figure 3. 2nd Harmonic Input Intercept Point vs. Forward Bias Current for Switch Diodes. Trr – REVERSE RECOVERY TIME (ns) 1000 100 IF – FORWARD CURRENT (mA) VR = 5 V 100 VR = 10 V VR = 20 V 10 10 20 30 FORWARD CURRENT (mA) Figure 4. Reverse Recovery Time vs. Forward Current for Various Reverse Voltages. 10 1 0.1 0.01 0 125 C 25 C –50 C 0.2 0.4 0.6 0.8 1.0 1.2 VF – FORWARD VOLTAGE (mA) Figure 5. Forward Current vs. Forward Voltage. Equivalent Circuit Model HSMP-386x Chip* Rs Rj 1.5 Ω Cj 0.12 pF 3 RT = 1.5 + Rj CT = CP + Cj Rj = 12 I0.9 Ω I = Forward Bias Current in mA � * See AN1124 for package models Typical Applications for Multiple Diode Products RF COMMON RF COMMON RF 1 BIAS 1 RF 2 BIAS 2 Figure 6. Simple SPDT Switch, Using Only Positive Current. RF COMMON BIAS RF 1 BIAS Figure 7. High Isolation SPDT Switch, Dual Bias. RF COMMON RF 2 BIAS RF 1 RF 2 RF 1 BIAS Figure 8. Switch Using Both Positive and Negative Current. VARIABLE BIAS INPUT Figure 9. Very High Isolation SPDT Switch, Dual Bias. RF IN/OUT FIXED BIAS VOLTAGE .


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