Document
HSMP-386x Surface Mount PIN Diodes
Data Sheet
Description/Applications
The HSMP-386x series of general purpose PIN diodes are designed for two classes of applications. The first is attenuators where current consumption is the most important design consideration. The second application for this series of diodes is in switches where low capacitance is the driving issue for the designer. TRthheasetisrHteaSqnMuceiPre-(3Rg8Tu6)axararsenetrteiyeepsdicTpaoel trsafpol erCmcaiafpincaaccteii,toatnhnsec. egFoe(CrneTa)rpaaplnlpidcuarTtpioootnsaesl HSMP-383x series is recommended. A SPICE model is not available for PIN diodes as SPICE does not provide for a key PIN diode characteristic, carrier lifetime.
Pin Connections and Package Marking, SOT-363
16
25
Features
• Unique Configurations in Surface Mount Packages – Add Flexibility – Save Board Space – Reduce Cost • Switching – Low Distortion Switching – Low Capacitance • Attenuating – Low Current Attenuating for Less Power
Consumption • Matched Diodes for Consistent Performance • Better Thermal Conductivity for Higher Power
Dissipation • Low Failure in Time (FIT) Rate[1] • Lead-free
Note: 1. For more information see the Surface Mount PIN Reliability Data
Sheet.
LUx
34
Notes: 1. Package marking provides orientation, identification, and date code. 2. See “Electrical Specifications” for appropriate package marking.
Package Lead Code Identification, SOT-23, SOT-143 (Top View)
SINGLE
SERIES
#0 COMMON
ANODE
#2 COMMON CATHODE
Package Lead Code Identification, SOT-323 (Top View)
SINGLE
SERIES
B COMMON
ANODE
C COMMON CATHODE
Package Lead Code Identification, SOT-363 (Top View)
UNCONNECTED TRIO
654
123
L
#3
RING QUAD 34
#4
EF
12 D
See separate data sheet HSMP-386D
Absolute Maximum Ratings[1] TC = +25°C
Symbol Parameter
If Forward Current (1 µs Pulse) PIV Peak Inverse Voltage Tj Junction Temperature Tstg Storage Temperature qjc Thermal Resistance[2]
Unit Amp
V °C °C °C/W
SOT-23 1 50
150 -65 to 150
500
SOT-323 1 50
150 -65 to 150
150
ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.
Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. TthCe=c+ir2c5u°iCt ,bwoahredr.e TC is defined to be the temperature at the package pins where contact is made to
Electrical Specifications TC = 25°C, each diode
PIN General Purpose Diodes, Typical Specifications TA = 25°C
Package
Part Number
Marking
Lead
HSMP-
Code Code Configuration
3860 3862 3863 3864 386B 386C 386E 386F 386L
L0 L2 L3 L4 L0 L2 L3 L4 LL
0 Single 2 Series 3 Common Anode 4 Common Cathode B Single C Series E Common Anode F Common Cathode L Unconnected Trio
Test Conditions
Minimum Typical
Breakdown
Series Resistance
Voltage VBR (V)
RS (Ω)
50
3.0 /1.5*
Typical Total Capacitance
CT (pF) 0.20
MVeR a=sVuBrRe IR ≤ 10 µA
f
I=F =10100
mA MHz
IF = 100 mA*
fV=R
= 1
50 V MHz
2
HSMP-386x Typical Parameters at TC = 25°C
Part Number HSMP-
Total Resistance RT (Ω)
386x
22
Carrier Lifetime t (ns) 500
Te st Conditio ns f =IF 1=010mMAH z TIRF == 25500mmAA
Reverse Recovery Time Trr (ns) 80
90I%FV=R R=2e01c0omvVAe r y
Total Capacitance CT (pF) 0.20
fV=R
= 1
50 V MHz
TOTAL CAPACITANCE (pF)
Typical Performance, TC = 25°C, each diode
0.35 1000
RESISTANCE (OHMS)
0.30
0.25
1 MHz
100 MHz 0.20 1 GHz
100 10
TA = +85 C TA = +25 C TA = –55 C
0.15 0 2 4 6 8 10 12 14 16 18 20 REVERSE VOLTAGE (V)
Figure 1. RF Capacitance vs. Reverse Bias.
1 0.01
0.1
1
10 100
BIAS CURRENT (mA)
Figure 2. Typical RF Resistance vs. Forward Bias Current.
INPUT INTERCEPT POINT (dBm)
120 Diode Mounted as a
115
Series Switch in a 50 Microstrip and
110 Tested at 123 MHz
105
100
95
90
85 1 10 30
IF – FORWARD BIAS CURRENT (mA)
Figure 3. 2nd Harmonic Input Intercept Point vs. Forward Bias Current for Switch Diodes.
Trr – REVERSE RECOVERY TIME (ns)
1000
100
IF – FORWARD CURRENT (mA)
VR = 5 V 100 VR = 10 V
VR = 20 V
10 10 20 30 FORWARD CURRENT (mA)
Figure 4. Reverse Recovery Time vs. Forward Current for Various Reverse Voltages.
10
1
0.1
0.01 0
125 C 25 C –50 C 0.2 0.4 0.6 0.8 1.0 1.2
VF – FORWARD VOLTAGE (mA)
Figure 5. Forward Current vs. Forward Voltage.
Equivalent Circuit Model HSMP-386x Chip*
Rs Rj 1.5 Ω
Cj
0.12 pF
3
RT = 1.5 + Rj
CT = CP + Cj
Rj =
12 I0.9
Ω
I = Forward Bias Current in mA
�
* See AN1124 for package models
Typical Applications for Multiple Diode Products
RF COMMON
RF COMMON
RF 1 BIAS 1
RF 2 BIAS 2
Figure 6. Simple SPDT Switch, Using Only Positive Current.
RF COMMON
BIAS
RF 1 BIAS Figure 7. High Isolation SPDT Switch, Dual Bias.
RF COMMON
RF 2 BIAS
RF 1
RF 2
RF 1
BIAS
Figure 8. Switch Using Both Positive and Negative Current.
VARIABLE BIAS
INPUT
Figure 9. Very High Isolation SPDT Switch, Dual Bias.
RF IN/OUT
FIXED BIAS
VOLTAGE
.