GT40M301

GT40M301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40M301 HIGH POWER SWITCHING APPLICATIONS Unit: mm l The 3rd Generation l FRD Included Between Emitter and Collector l Enhancement−Mode l High Speed IGBT : tf = 0.25µs (TYP.) FRD : trr = 0.7µs (TYP.) l Low Saturation Voltage : VCE (sat) = 3.4V (MAX.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector−Emitter Voltage Gate−Emitter Voltage Collector Current Emitter−Collector Foward Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Screw Torque DC 1ms DC 1ms SYMBOL VCES VGES IC ICP IECF IECFP PC Tj Tstg ― RATING 900 ±25 40 80 15 120 200 150 −55~150 0.8 EQUIVALENT CIRCUIT UNIT V V A A A A W °C °C N·m JEDEC JEITA TOSHIBA Weight: 9.75g ― ― 2−21F2C 1 2001-06-06 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Gate Leakage Current Collector Cut−off Current Gate-Emitter Cut−off Voltage Collector−Emitter Saturation Voltage Collector−Emitter Saturation Voltage Input Capacitance Rise Time Switching Time Turn−On Time Fall Time Turn−Off Time Emitter−Collector Forward Voltage Reverse Recovery Time Thermal Resistance Thermal Resistance SYMBOL TEST CONDITION IGES ICES VGE (OFF) VCE (sat) (1) VCE (sat) (2) Cies VGE = ±25V, VCE = 0 VCE = 900V, VGE = 0 IC = 40mA, VCE = 5V IC = 8A, VGE = 15V IC = 40A, VGE = 15V VCE = 30V, VGE = 0 f = 1MHz tr ton tf toff VECF trr IEC = 15A, VGE = 0 IF = 15A, VGE = 0, di / dt = −20A / µs Rth (j−c) Rth (j−c...