STFI11N65M2

STF11N65M2, STFI11N65M2 N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Qg 2 Power MOSFETs in TO-220FP and I PAKFP packages Datasheet - preliminary data Features 3 2 1 TO-220FP 1 23 I2PAKFP Figure 1. Internal schematic diagram ' * 6 AM01476v1 Order codes STF11N65M2 STFI11N65M2 VDS 650 V RDS(on) max ID 0.67 Ω 7A Extremely low gate charge Lower RDS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected Applications Switching applications Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. Order codes STF11N65M2 STFI11N65M2 Table 1. Device summary Marking Package 11N65M2 TO-220FP 2 I PAKFP Packaging Tube May 2014 DocID025806 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/14 www.st.com Contents Contents STF11N65M2, STFI11N65M2 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics...