GT40Q321

GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application · · · · · The 5th generation Enhancement-mode High speed : tf = 0.41 µs (typ.) (IC = 40A) Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A) FRD included between emitter and collector Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 ±25 23 42 80 10 80 68 170 150 −55 to 150 Unit V V A A A W W °C °C JEDEC JEITA TOSHIBA ― ― 2-16C1C Weight: 4.6 g (typ.) Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.74 1.79 Unit °C/W °C/W Equivalent Circuit Collector Gate Emitter 1 2003-02-05 GT40Q321 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Diode forward voltage Reverse recovery time Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr IF = 10 A, VGE = 0 IF = 10 A, di/dt = −20 A/µs Test Condition VGE = ±25 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = ...