Document
GT40T301
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40T301
Parallel Resonance Inverter Switching Applications
Unit: mm • • • • FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ.) (IC = 40 A) FRD : trr = 0.7 µs (typ.) (di/dt = −20 A/µs) Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IECF IECPF PC Tj Tstg Rating 1500 ±25 40 80 30 80 200 150 −55~150 Unit V V A
A W °C °C
JEDEC JEITA TOSHIBA
― ― 2-21F2C
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
Weight: 9.75 g (typ.)
Equivalent Circuit
Collector
Gate
Emitter
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Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Emitter-collector forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VECF trr Rth (j-c) 15 Ω 51 Ω 15 V 0 −15 V IECF = 30 A, VGE = 0 IECF = 30 A, VGE = 0, di/dt = −20 A/µs IGBT Diode Test Condition VGE = ±25 V, VCE = 0 VCE = 1500 V, VGE = 0 IC = 40 mA, VCE = 5 V IC = 40 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Min 4.0 Typ. 3.7 2900 0.40 0.45 0.23 0.6 1.9 0.7 Max ±500 1.0 7.0 5.0 Unit nA mA V V pF
0.40
µs
600 V
2.5 3.0 0.625 1.25 V µs °C/W
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IC – VCE
100 25 80 20 15 10 Common emitter
VCE – VGE
(V)
12
Tc = −40°C 8 60 6 20 4 80 40
(A)
60
40
10
Collector-emitter voltage VCE
Collector current
IC
20 VGE = 8 V 0 0 2 4 6 8 10
2
IC = 10 A
0 0
4
8
12
16
20
Collector-emitter voltage VCE
(V)
Gate-emitter voltage
VGE
(V)
VCE – VGE
10 Common emitter 10 Tc = 25°C 8
VCE – VGE
(V)
(V)
8
Collector-emitter voltage VCE
Collector-emitter voltage VCE
80 6 60 40 4 20 2 Common emitter Tc = 125°C 0 0
6 60 4 40 20 IC = 10 A
80
2
IC = 10 A
0 0
4
8
12
16
20
4
8
12
16
20
Gate-emitter voltage
VGE
(V)
Gate-emitter voltage
VGE
(V)
IC – VGE
100 Common emitter 80 10
VCE (sat) – Tc
Common emitter
Collector-emitter saturation voltage VCE (sat) (V)
VCE = 5 V
VGE = 15 V 8
IC
(A)
60
6
Collector current
80 60
40 25 20 Tc = 125°C −40 0 0 4 8 12 16 20
4
40 20
2
IC = 10 A
0 −80
−40
0
40
80
120
160
Gate-emitter voltage
VGE
(V)
Case temperature Tc
(°C)
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VCE, VGE – QG
10
Switching time – RG
Common Common emitter emitter RL = 7.5 Ω Tc = 25°C VCC = 600 V IC = 40 A VGG = ±15 V Tc = 25°C
Collector-emitter voltage VCE (×10 V) Gate-emitter voltage VGE (V)
(µs) Switching time
30
5 3
20
1 0.5 0.3
toff ton tr
10
200
300
tf
VCE = 100 V 0 0 40 80 120 160 200 240 280 0.1 1 3 5 10 30 50 100 300 500 1000
Gate charge
QG
(nC)
Gate resistance RG
(Ω)
Switching time – IC
10 5 3 Common emitter VCC = 600 V RG = 51 Ω VGG = ±15 V Tc = 25°C 10000 5000 3000
C – VCE
Cies
(µs)
(pF)
ton tr
1000 500 300 Coes 100 50 30 10 5 3 1 1 Common emitter VGE = 0 V f = 1 MHz Tc = 25°C Cres
1 0.5 0.3
toff
Switching time
tf
0.1 0.05 0.03
0.01 0
10
20
30
40
50
Capacitance
C
3
5
10
30
50
100
Collector current
IC
(A)
Collector-emitter voltage VCE
(V)
Safe operating area
300 IC max (pulsed)* 200 10 ms* 1 ms* 10 µs* IC max (continuous) 100 µs* 100
Reverse bias SOA
(A)
100 50 30
IC
Collector current
IC Collector current
(A)
30 10 Tj < = 125°C VGE = ±15 V RG = 51 Ω 3 10 30 100 300 1000 3000 3000
10 5 DC operation
3 *: Single nonrepetitive pulse Tc = 25°C 1 Curves must be derated linearly with increase in 0.5 temperature. 0.3 1 3 10 30
100
300
1000
Collector-emitter voltage VCE
(V)
Collector-emitter voltage VCE
(V)
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10
1
Rth (t) – tw
100
IECF – VECF
Common collector
Emitter-collector forward current IECF (A)
Transient thermal impedance Rth (t) (°C/W)
10
0 Diode IGBT
80
60
Tc = 40°C 25
1 10−
40 125 20
2 10−
3 10− 5 10−
Tc = 25°C 4 10− 3 10− 2 10− 1 10− 10 0 10 1 10 2 0 0 1 2 3 4 5
Pulse width
tw
(s)
Emitter-collector forward voltage
VECF
(V)
Irr, trr – IECF
2.5 20 1.0 100
Irr, trr – di/dt
(A)
Common collector Common collector 80 IECF = 30 A Tc = 25°C
(A)
(µs)
Irr
Tc = 25°C
Peak reverse recovery current
1.5
12 Irr 8 trr 4
0.6
Peak reverse recovery current
trr
Reverse recovery time
Reverse recovery time
trr
Irr
2.0
16
(µs)
di/dt = −20 A/µs
0.8
60 trr 40
1.0
0.4
0.5
0.2
20
Irr
0
0 0
20
40
60
80
100
0
0 0
40
80
120
160
200
240
Emitter-collector forward current
IECF
(A)
di/dt
(A/µs)
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RESTRICTIONS ON PRODUCT USE
000707EAA
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