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GT40T301 Dataheets PDF



Part Number GT40T301
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel IGBT
Datasheet GT40T301 DatasheetGT40T301 Datasheet (PDF)

GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm • • • • FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ.) (IC = 40 A) FRD : trr = 0.7 µs (typ.) (di/dt = −20 A/µs) Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forw.

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GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm • • • • FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ.) (IC = 40 A) FRD : trr = 0.7 µs (typ.) (di/dt = −20 A/µs) Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IECF IECPF PC Tj Tstg Rating 1500 ±25 40 80 30 80 200 150 −55~150 Unit V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-21F2C Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Weight: 9.75 g (typ.) Equivalent Circuit Collector Gate Emitter 1 2002-01-18 GT40T301 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Emitter-collector forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VECF trr Rth (j-c) 15 Ω 51 Ω 15 V 0 −15 V IECF = 30 A, VGE = 0 IECF = 30 A, VGE = 0, di/dt = −20 A/µs IGBT Diode Test Condition VGE = ±25 V, VCE = 0 VCE = 1500 V, VGE = 0 IC = 40 mA, VCE = 5 V IC = 40 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Min   4.0   Typ.    3.7 2900 0.40 0.45 0.23 0.6 1.9 0.7   Max ±500 1.0 7.0 5.0   Unit nA mA V V pF          0.40 µs 600 V  2.5 3.0 0.625 1.25 V µs °C/W 2 2002-01-18 GT40T301 IC – VCE 100 25 80 20 15 10 Common emitter VCE – VGE (V) 12 Tc = −40°C 8 60 6 20 4 80 40 (A) 60 40 10 Collector-emitter voltage VCE Collector current IC 20 VGE = 8 V 0 0 2 4 6 8 10 2 IC = 10 A 0 0 4 8 12 16 20 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE – VGE 10 Common emitter 10 Tc = 25°C 8 VCE – VGE (V) (V) 8 Collector-emitter voltage VCE Collector-emitter voltage VCE 80 6 60 40 4 20 2 Common emitter Tc = 125°C 0 0 6 60 4 40 20 IC = 10 A 80 2 IC = 10 A 0 0 4 8 12 16 20 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC – VGE 100 Common emitter 80 10 VCE (sat) – Tc Common emitter Collector-emitter saturation voltage VCE (sat) (V) VCE = 5 V VGE = 15 V 8 IC (A) 60 6 Collector current 80 60 40 25 20 Tc = 125°C −40 0 0 4 8 12 16 20 4 40 20 2 IC = 10 A 0 −80 −40 0 40 80 120 160 Gate-emitter voltage VGE (V) Case temperature Tc (°C) 3 2002-01-18 GT40T301 VCE, VGE – QG 10 Switching time – RG Common Common emitter emitter RL = 7.5 Ω Tc = 25°C VCC = 600 V IC = 40 A VGG = ±15 V Tc = 25°C Collector-emitter voltage VCE (×10 V) Gate-emitter voltage VGE (V) (µs) Switching time 30 5 3 20 1 0.5 0.3 toff ton tr 10 200 300 tf VCE = 100 V 0 0 40 80 120 160 200 240 280 0.1 1 3 5 10 30 50 100 300 500 1000 Gate charge QG (nC) Gate resistance RG (Ω) Switching time – IC 10 5 3 Common emitter VCC = 600 V RG = 51 Ω VGG = ±15 V Tc = 25°C 10000 5000 3000 C – VCE Cies (µs) (pF) ton tr 1000 500 300 Coes 100 50 30 10 5 3 1 1 Common emitter VGE = 0 V f = 1 MHz Tc = 25°C Cres 1 0.5 0.3 toff Switching time tf 0.1 0.05 0.03 0.01 0 10 20 30 40 50 Capacitance C 3 5 10 30 50 100 Collector current IC (A) Collector-emitter voltage VCE (V) Safe operating area 300 IC max (pulsed)* 200 10 ms* 1 ms* 10 µs* IC max (continuous) 100 µs* 100 Reverse bias SOA (A) 100 50 30 IC Collector current IC Collector current (A) 30 10 Tj < = 125°C VGE = ±15 V RG = 51 Ω 3 10 30 100 300 1000 3000 3000 10 5 DC operation 3 *: Single nonrepetitive pulse Tc = 25°C 1 Curves must be derated linearly with increase in 0.5 temperature. 0.3 1 3 10 30 100 300 1000 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 4 2002-01-18 GT40T301 10 1 Rth (t) – tw 100 IECF – VECF Common collector Emitter-collector forward current IECF (A) Transient thermal impedance Rth (t) (°C/W) 10 0 Diode IGBT 80 60 Tc = 40°C 25 1 10− 40 125 20 2 10− 3 10− 5 10− Tc = 25°C 4 10− 3 10− 2 10− 1 10− 10 0 10 1 10 2 0 0 1 2 3 4 5 Pulse width tw (s) Emitter-collector forward voltage VECF (V) Irr, trr – IECF 2.5 20 1.0 100 Irr, trr – di/dt (A) Common collector Common collector 80 IECF = 30 A Tc = 25°C (A) (µs) Irr Tc = 25°C Peak reverse recovery current 1.5 12 Irr 8 trr 4 0.6 Peak reverse recovery current trr Reverse recovery time Reverse recovery time trr Irr 2.0 16 (µs) di/dt = −20 A/µs 0.8 60 trr 40 1.0 0.4 0.5 0.2 20 Irr 0 0 0 20 40 60 80 100 0 0 0 40 80 120 160 200 240 Emitter-collector forward current IECF (A) di/dt (A/µs) 5 2002-01-18 GT40T301 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products..


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