D1525

2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1525 High Current Switching Applications Unit: mm · High collector current: IC = 30 A · High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) · Monolithic construction with built-in base-emitter shunt resistor. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 100 100 5 30 5 150 150 −55 to 150 Unit V V V A A W °C °C Equivalent Circuit COLLECTOR BASE ≈ 2 kΩ ≈ 100 Ω EMITTER JEDEC ― JEITA ― TOSHIBA 2-21F1A Weight: 9.75 g (typ.) 1 2003-02-04 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Emitter-collector forward voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) VECF fT Cob VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 IC = 50 mA, IB = 0 VCE = 5 V, IC = 20 A VCE = 5 V, IC = 30 A IC = 20 A, IB = 0.2 A IE = 10 A, IB = 0 VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz 2SD1525 Min Typ. Max Unit ― ― 100 1000 200 ― ― ― ― ― ― ― ― ― ― ― ― ― 10 500 100 µA 10 mA ―V ― ― 1.5 V 2.5 ...