2SC3203 NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications. The transistor is subdivide...
2SC3203
NPN Silicon Epitaxial Planar
Transistor
for switching and AF amplifier applications. The
transistor is subdivided into tow group, O And Y and according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range
1. Emitter 2. Collector 3. Base TO-92 Plastic Package
Symbol VCBO VCEO VEBO IC IE Ptot Tj Tstg
Value 35 30 5 800 -800 600 150
- 55 to + 150
Unit V V V mA mA
mW OC OC
Characteristics at Ta = 25 OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at VCE = 1 V, IC = 100 mA at VCE = 1 V, IC = 700 mA
Current Gain Group O hFE
100
-
200
-
Y hFE
160
-
320
-
hFE 35
-
-
-
Collector Base Cutoff Current at VCB = 35 V
ICBO
-
- 0.1 µA
Emitter Base Cutoff Current at VEB = 5 V
IEBO
-
- 0.1 µA
Collector Emitter Breakdown Voltage at IC = 10 mA
V(BR)CEO
30
-
-
V
Collector Emitter Saturation Voltage at IC = 500 mA, IB = 20 mA
VCE(sat)
-
- 0.5 V
Base Emitter Voltage at IC = 10 mA, VCE = 1 V
VBE 0.5 - 0.8 V
Transition Frequency at VCE = 5 V, IC = 10 mA
fT - 120 - MHz
Collector Output Capacitance at VCB = 10 V, f = 1 MHz
Cob - 13 - pF
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7/15/2011
Total power dissipation, mW
Pc – Ta
800 600 400 200
0 50 100 150 200
Ambient temperature Ta ( C)
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