ST 2SC3203
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
The transistor is subdivided into tow group, O and Y and according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25? )
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC IE Ptot Tj TS
G S P FORM A IS AVAILABLE
Value 35 30 5 800 -800 600 150
-55 to +150
Unit V V V mA mA
mW OC OC
РАДИОТЕХ-ТРЕЙД
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ST 2SC3203
Characteristics at Tamb=25 OC
DC Current Gain at VCE=1V, IC=100mA Current Gain Group O Y at VCE=1V, IC=700mA
Collector Cutoff Current at VCB=35V
Emitter Cutoff Current at VEB=5V
Collector Emitter Saturation Voltage at .