P-Channel 20 V (D-S) MOSFET
P-Channel 20 V (D-S) MOSFET
Si3443CDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.060 at VGS = - 4.5 V
...
Description
P-Channel 20 V (D-S) MOSFET
Si3443CDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.060 at VGS = - 4.5 V
- 20 0.084 at VGS = - 2.7 V
0.100 at VGS = - 2.5 V
ID (A)a - 4.7 - 3.9 - 3.4
Qg (Typ.) 7.53 nC
TSOP-6 Top View
FEATURES Halogen-free According to IEC 61249-2-21
Definition TrenchFET® Power MOSFET PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC
APPLICATIONS HDD Asynchronous Rectification Load Switch for Portable Devices
(4) S
16
3 mm
25 34
2.85 mm
Marking Code
AL XXX
Lot Traceability and Date Code
Part # Code
Ordering Information: Si3443CDV-T1-E3 (Lead (Pb)-free) Si3443CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
(3) G
(1, 2, 5, 6) D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current Maximum Power Dissipation
TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Operating Junction and Storage Temperature Range
VDS VGS ID
IDM IS
PD
TJ, Tstg
Limit
- 20
± 12
- 5.97
- 4.6 - 4.7b, c - 3.4b, c
- 20
- 2.67 - 1.71b, c
3.2
2.05 2b, c 1.28b, c - 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board.
c. t ...
Similar Datasheet