CoolMOSTM Power Transistor
Features • Lowest figure-of -merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC1) for target applications
Product Summary V DS @Tjmax R DS(on),max Q g,typ
IPP50R199CP
550 V 0.199 Ω
34 nC
PG-TO220
CoolMOS CP is designed for: • Hard & soft switching SMPS topologies • CCM PFC for ATX, Notebook adapter and PDP and LCD TV • PWM for ATX, Notebook adapter, PDP & LCD TV
Type IPP50R199CP
Package PG-TO220
Marking 5R199P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3) AR
Avalanche
current,
repetitive
t
2),3) AR
MOSFET dv /dt ruggedness
Gate source voltage
I D,pulse E AS E AR I AR dv /dt V GS
T C=100 °C T C=25 °C I D=6.6 A, V DD=50 V I D=6.6 A, V DD=50 V
V DS=0...400 V static
AC (f >1 Hz)
Power dissipation Operating and storage temperature
P tot T C=25 °C T j, T stg
Mounting torque
M3 and M3.5 screws
Rev. 2.0
page 1
Value 17 11 40 436 0.66 6.6 50 ±20 ±30 139
-55 ... 150 60
Unit A
mJ
A V/ns V
W °C Ncm
2007-11-06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4)
Symbol Conditions
IS I S,pulse
T C=25 °C
dv /dt
IPP50R199CP
Value 9.9 40 15
Unit A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient
R thJC R thJA
leaded
Soldering temperature, wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.) from case for 10 s
min.
Values typ.
Unit max.
- - 0.9 K/W - - 62 - - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
500
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=0.66 mA 2.5 3 3.5
Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
Gate resistance
I DSS
V DS=500 V, V GS=0 V, T j=25 °C
V DS=500 V, V GS=0 V, T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=9.9 A, T j=25 °C
V GS=10 V, I D=9.9 A, T j=150 °C
R G f =1 MHz, open drain
-
-
-
- 1 µA
10 - 100 nA 0.18 0.199 Ω
0.45 2.2
-Ω
Rev. 2.0
page 2
2007-11-06
Parameter Dynamic characteristics
Symbol Conditions
IPP50R199CP
min.
Values typ.
Unit max.
Input capacitance Output capacitance
C iss C oss
Effective output capacitance, energy related5)
C o(er)
Effective output capacitance, time related6)
Turn-on delay time Rise time Turn-off delay time Fall time
C o(tr)
t d(on) tr t d(off) tf
V GS=0 V, V DS=100 V, f =1 MHz
V GS=0 V, V DS=0 V to 400 V
V DD=400 V, V GS=10 V, I D=9.9 A, R G=16.4 Ω
-
-
-
-
1800 80
75
160
35 14 80 10
- pF -
-
-
- ns -
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage
Q gs Q gd Qg V plateau
V DD=400 V, I D=9.9 A, V GS=0 to 10 V
-
8 - nC 11 34 45 5.2 - V
Reverse Diode
Diode forward voltage
V SD
V GS=0 V, I F=9.9 A, T j=25 °C
- 0.9 1.2 V
Reverse recovery time Reverse recovery charge Peak reverse recovery current 1) J-STD20 and JESD22
t rr
Q rr
V R=400 V, I F=I S, di F/dt =100 A/µs
I rrm
- 340 - ns - 4 - µC - 24 - A
2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f. 4) I SD≤I D, di /dt ≤200A/µs, V DClink=400V, V peak