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IPP50R199CP Dataheets PDF



Part Number IPP50R199CP
Manufacturers Infineon
Logo Infineon
Description Power Transistor
Datasheet IPP50R199CP DatasheetIPP50R199CP Datasheet (PDF)

CoolMOSTM Power Transistor Features • Lowest figure-of -merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC1) for target applications Product Summary V DS @Tjmax R DS(on),max Q g,typ IPP50R199CP 550 V 0.199 Ω 34 nC PG-TO220 CoolMOS CP is designed for: • Hard & soft switching SMPS topologies • CCM PFC for ATX, Notebook adapter and PDP and LCD TV • PWM for ATX, Notebook adapter, PDP & .

  IPP50R199CP   IPP50R199CP


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CoolMOSTM Power Transistor Features • Lowest figure-of -merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC1) for target applications Product Summary V DS @Tjmax R DS(on),max Q g,typ IPP50R199CP 550 V 0.199 Ω 34 nC PG-TO220 CoolMOS CP is designed for: • Hard & soft switching SMPS topologies • CCM PFC for ATX, Notebook adapter and PDP and LCD TV • PWM for ATX, Notebook adapter, PDP & LCD TV Type IPP50R199CP Package PG-TO220 Marking 5R199P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS T C=100 °C T C=25 °C I D=6.6 A, V DD=50 V I D=6.6 A, V DD=50 V V DS=0...400 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg Mounting torque M3 and M3.5 screws Rev. 2.0 page 1 Value 17 11 40 436 0.66 6.6 50 ±20 ±30 139 -55 ... 150 60 Unit A mJ A V/ns V W °C Ncm 2007-11-06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse T C=25 °C dv /dt IPP50R199CP Value 9.9 40 15 Unit A V/ns Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA leaded Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s min. Values typ. Unit max. - - 0.9 K/W - - 62 - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 500 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=0.66 mA 2.5 3 3.5 Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance I DSS V DS=500 V, V GS=0 V, T j=25 °C V DS=500 V, V GS=0 V, T j=150 °C I GSS V GS=20 V, V DS=0 V R DS(on) V GS=10 V, I D=9.9 A, T j=25 °C V GS=10 V, I D=9.9 A, T j=150 °C R G f =1 MHz, open drain - - - - 1 µA 10 - 100 nA 0.18 0.199 Ω 0.45 2.2 -Ω Rev. 2.0 page 2 2007-11-06 Parameter Dynamic characteristics Symbol Conditions IPP50R199CP min. Values typ. Unit max. Input capacitance Output capacitance C iss C oss Effective output capacitance, energy related5) C o(er) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time C o(tr) t d(on) tr t d(off) tf V GS=0 V, V DS=100 V, f =1 MHz V GS=0 V, V DS=0 V to 400 V V DD=400 V, V GS=10 V, I D=9.9 A, R G=16.4 Ω - - - - 1800 80 75 160 35 14 80 10 - pF - - - - ns - Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Q gs Q gd Qg V plateau V DD=400 V, I D=9.9 A, V GS=0 to 10 V - 8 - nC 11 34 45 5.2 - V Reverse Diode Diode forward voltage V SD V GS=0 V, I F=9.9 A, T j=25 °C - 0.9 1.2 V Reverse recovery time Reverse recovery charge Peak reverse recovery current 1) J-STD20 and JESD22 t rr Q rr V R=400 V, I F=I S, di F/dt =100 A/µs I rrm - 340 - ns - 4 - µC - 24 - A 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f. 4) I SD≤I D, di /dt ≤200A/µs, V DClink=400V, V peak


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