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VS-16TTS12STRL-M3

Vishay

Thyristor High Voltage / Surface Mount Phase Control SCR

www.vishay.com VS-16TTS08S-M3, VS-16TTS12S-M3 Series Vishay Semiconductors Thyristor High Voltage, Surface Mount Phase...


Vishay

VS-16TTS12STRL-M3

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Description
www.vishay.com VS-16TTS08S-M3, VS-16TTS12S-M3 Series Vishay Semiconductors Thyristor High Voltage, Surface Mount Phase Control SCR, 16 A 2, 4 Anode 2 1 3 D2PAK (TO-263AB) 13 Cathode Gate PRIMARY CHARACTERISTICS IT(AV) VDRM/VRRM VTM IGT TJ Package 10 A 800 V, 1200 V 1.4 V 60 mA -40 °C to 125 °C D2PAK (TO-263AB) Circuit configuration Single SCR FEATURES Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Designed and JEDEC®-JESD 47 qualified according Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Input rectification (soft start) Vishay input diodes, switches and output rectifiers which are available in identical package outlines DESCRIPTION The VS-16TTS..S-M3 high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE NEMA FR-4 or G-10 glass fabric-based epoxy 2.5 with 4 oz. (140 μm) copper Aluminum IMS, RthCA = 15 °C/W Aluminum IMS with heatsink, RthCA = 5 °C/W 6.3 14.0 Note TA = 55 °C, TJ = 125 °C, footprint 300 mm2 THREE-PHASE BRIDGE 3.5 9.5 18.5 MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) IRMS VRRM/VDRM ITSM VT dV/dt Sinusoidal waveform 10 A, TJ = 25 °C dI/dt TJ VALUES 10 16 800 to 1200 200 1.4 500 1...




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