Thyristor High Voltage / Surface Mount Phase Control SCR
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VS-16TTS08S-M3, VS-16TTS12S-M3 Series
Vishay Semiconductors
Thyristor High Voltage, Surface Mount Phase...
Description
www.vishay.com
VS-16TTS08S-M3, VS-16TTS12S-M3 Series
Vishay Semiconductors
Thyristor High Voltage, Surface Mount Phase Control SCR, 16 A
2, 4 Anode
2 1
3 D2PAK (TO-263AB)
13 Cathode Gate
PRIMARY CHARACTERISTICS
IT(AV) VDRM/VRRM
VTM IGT TJ Package
10 A 800 V, 1200 V
1.4 V 60 mA -40 °C to 125 °C D2PAK (TO-263AB)
Circuit configuration
Single SCR
FEATURES
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
Designed and JEDEC®-JESD 47
qualified
according
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS Input rectification (soft start)
Vishay input diodes, switches and output rectifiers which are available in identical package outlines
DESCRIPTION
The VS-16TTS..S-M3 high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
NEMA FR-4 or G-10 glass fabric-based epoxy 2.5
with 4 oz. (140 μm) copper
Aluminum IMS, RthCA = 15 °C/W Aluminum IMS with heatsink, RthCA = 5 °C/W
6.3 14.0
Note TA = 55 °C, TJ = 125 °C, footprint 300 mm2
THREE-PHASE BRIDGE 3.5 9.5 18.5
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV) IRMS VRRM/VDRM ITSM VT dV/dt
Sinusoidal waveform 10 A, TJ = 25 °C
dI/dt
TJ
VALUES 10 16
800 to 1200 200 1.4 500 1...
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