ST 2SC2458
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
The transistor is subdiv...
ST 2SC2458
NPN Silicon Epitaxial Planar
Transistor for switching and AF amplifier applications.
The
transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta=25 oC)
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC IB Ptot Tj TS
G S P FORM A IS AVAILABLE
Value 50 50 5 150 50 200 125
-55 to +125
Unit V V V mA mA
mW OC OC
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта:
[email protected] Веб: www.rct.ru
®
ST 2SC2458
Characteristics at Tamb=25 oC
DC Current Gain at VCE=6V, IC=2mA
Current Gain Group
O Y G L
Collector Cutoff Current at VCB=50V
Emitter Cutoff Current at VEB=5V
Collector Emitter Saturation Voltage at IC=100mA, IB=10mA
Transition Frequency at VCE=10V, IC=1mA
Noise Figure at VCE=6V, IC=0.1mA f=1KHz,Rg=10KΩ
Collector Output Capacitance at VCB=10V, f=1MHz
Symbol
hFE hFE hFE hFE
ICBO
IEBO
VCE(sat)
fT NF
COB
Min.
70 120 200 350
-
-
-
80 -
-
G S P FORM A IS AVAILABLE
Typ.
-
-
-
0.10
1.0
2.0
Max.
140 240 400 700
0.1
0.1
0.25
10
3.5
Unit
-
µA
µA
V
MHz dB
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
® listed on the Hong Kong Stock Exchange, Stock Code: 724)
D...