2SC2458

************************************************************************************* 2SC2458 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS(TA=25 ) Parameter Symbol Limits Unit Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO V Emitter -Base Voltage VEBO V Collector Current Ic mA Collector Dissipation Pc mW Junction Temperature TJ Storage Temperature TSTG -55 ~ +150 ELECTRCAL CHARACTERISTICS(TA=25 ) Parameter Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC= 0.1mA,IE=0 V Collector-Emitter Breakdown Voltage BVCEO IC= 1mA,IB=0 V Emitter -Base Breakdown Voltage BVEBO IE= 0.1mA,IC=0 V Collector Cut-off Current ICBO VCB =50V,IE=0 nA Emitter Cut-off Current IEBO VEB = 5V,IC=0, nA Collector-Emitter Saturation Voltage VcE(sat) IC= 100mA,IB=10mA V DC Current Gain hFE VCE= 6V,IC=2mA, Transition ftequency fT VCE = 10V,Ic= 1mA MHZ Output Capacitance COB VCB= 10V,IE= 0,f=1MHZ pF hFE CLASSIFICAT ION Ltem O Y GR BL HFE 70-140 120-240 200-400 350-700 ...