2SC2458

2SC2458 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25oC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS Value 50 50 5 150 50 200 125 -55 to +125 Unit V V V mA mA mW OC OC Page 1 of 2 7/15/2011 Characteristics at Tamb=25 oC Parameter DC Current Gain at VCE=6V, IC=2mA Current Gain Group O Y G L Collector Cutoff Current at VCB=50V Emitter Cutoff Current at VEB=5V Collector Emitter Saturation Voltage at IC=100mA, IB=10mA Transition Frequency at VCE=10V, IC=1mA Noise Figure at VCE=6V, IC=0.1mA f=1KHz,Rg=10KΩ Collector Output Capacitance at VCB=10V, f=1MHz Symbol hFE hFE hFE hFE ICBO IEBO VCE(sat) fT NF COB Min. 70 120 200 350 - - - 80 - - Typ. - - - 0.10 1.0 2.0 Max. 140 240 400 700 0.1 0.1 0.25 10 3.5 Unit - μA μA V MHz dB pF Page 2 of 2 7/15/2011 ...