Document
2SC2458 NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta=25oC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC IB Ptot Tj TS
Value 50 50 5 150 50 200 125
-55 to +125
Unit V V V mA mA
mW OC OC
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Characteristics at Tamb=25 oC
Parameter
DC Current Gain at VCE=6V, IC=2mA
Current Gain Group
O Y G L
Collector Cutoff Current at VCB=50V
Emitter Cutoff Current at VEB=5V
Collector Emitter Saturation Voltage at IC=100mA, IB=10mA
Transition Frequency at VCE=10V, IC=1mA
Noise Figure at VCE=6V, IC=0.1mA f=1KHz,Rg=10KΩ
Collector Output Capacitance at VCB=10V, f=1MHz
Symbol
hFE hFE hFE hFE
ICBO
IEBO
VCE(sat)
fT NF
COB
Min.
70 120 200 350
-
-
-
80 -
-
Typ.
-
-
-
0.10
1.0
2.0
Max.
140 240 400 700
0.1
0.1
0.25
10
3.5
Unit
-
μA
μA
V
MHz dB
pF
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