AUIRGP50B60PD1

AUTOMOTIVE GRADE PD - 96306A AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications Automotive HEV and EV PFC and ZVS SMPS Circuits Features Low VCE(ON) NPT Technology, Positive Temperature Coefficient Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant Automotive Qualified * Benefits Parallel Operation for Higher Current Applications Lower Conduction Losses and Switching Losses Higher Switching Frequency up to 150kHz C G E n-channel VCES = 600V VCE(on) typ. = 2.00V @ VGE = 15V IC = 33A Equivalent MOSFET Parameters RCE(on) typ. = 61mΩ ID (FET equivalent) = 50A E C G TO-247AC AUIRGP50B60PD1 G C E C G TO-247AD AUIRGP50B60PD1E E Absolute Maximum Ratings Gate Collector Emitter Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter Max. Units VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC ...