Document
GT8G131
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G131
Strobe Flash Applications
Unit: mm
· · · · ·
Supplied in Compact and Thin Package Requires Only a Small Mounting Area 4th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse DC 1 ms Symbol VCES VGES VGES IC ICP PC Tj Tstg Rating 400 ±6 ±8 8 150 1.1 150 -55~150 2 Unit V V
Collector current
A W °C °C
Collector power dissipation (Note 1) Junction temperature Storage temperature range
JEDEC JEITA TOSHIBA
― ― 2-6J1C
Note 1: Drive operation: Mount on glass epoxy board [1 inch ´ 1.5 t]
Weight: 0.080 g (typ.)
Equivalent Circuit
8 7 6 5
1
2
3
4
These devices are MOS type. Users should follow proper ESD handling procedures. Operating condition of turn-off dv/dt should be lower than 400 V/ms.
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2003-03-18
GT8G131
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Thermal resistance (Note 2) tf toff Rth (j-a) 2 Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton Test Condition VGE = ±6 V, VCE = 0 VCE = 400 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 150 A, VGE = 4 V VCE = 10 V, VGE = 0, f = 1 MHz 4V 0 2.0 9 51 W Min ¾ ¾ 0.6 ¾ ¾ Typ. ¾ ¾ ¾ 3.0 3800 1.5 1.7 1.9 2.4 ¾ Max ±10 10 1.5 7.0 ¾ Unit mA mA V V pF
¾ ¾ ¾
¾ ¾
¾ ¾
ms ¾
VIN: tr < = 100 ns tf < = 100 ns Duty cycle < = 1% ¾
300 V
¾
114 °C/W
Note 2: Drive operation: Mount on glass epoxy board [1 inch ´ 1.5 t]
Marking
GT8G131 ※
Type Lot No. ● on lower left of the marking indicates Pin 1.
※ Weekly code: (Three digits)
Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year)
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GT8G131
IC – VCE
200 Common emitter Tc = -40°C 160 4.5 V VGE = 5 V 200 4.0 V 160 Common emitter Tc = 25°C
IC – VCE
4.5 V 4.0 V
(A)
(A)
3.5 V 3.0 V
VGE = 5 V 120
3.5 V
IC
120
IC
Collector current
80
2.5 V
Collector current
3.0 V
80 2.5 V 40
40
0
0
1
2
3
4
5
0
0
1
2
3
4
5
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
IC – VCE
200 Common emitter Tc = 70°C 4.5 V 200 4.0 V 160 Common emitter Tc = 125°C
IC – VCE
4.5 V VGE = 5 V 4.0 V
(A)
(A)
160
VGE = 5 V
3.5 V
3.5 V
IC
120
IC Collector current
3.0 V 120 3.0 V 80 2.5 V 40 80 2.5 V 40 0 0 1 2 3 4 5 0
Collector current
0
1
2
3
4
5
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
IC – VGE
200 5 Common emitter VCE = 5 V 25°C 70°C Common emitter VGE = 4 V 4
VCE (sat) – Tc
(A)
160
Collector-emitter saturation voltage VCE (sat) (V)
IC = 150 A 3 120 A 2 90 A 60 A 1
IC
120
-40°C Tc = 125°C
Collector current
80
40
0
0
1
2
3
4
5
0 -80
-40
0
40
80
120
160
Gate-emitter voltage VGE
(V)
Case temperature Tc
(°C)
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GT8G131
VCE – VGE
5 5
VCE – VGE
(V)
Common emitter Tc = 25°C 4 IC = 150 A 3 120 A 90 A 2 60 A
(V)
Common emitter Tc = -40°C 4
VCE
Collector-emitter voltage
3
120 A 90 A 2 60 A
1
Collector-emitter voltage
5
IC = 150 A
VCE
1 0 0 1 2 3 4 0
0
1
2
3
4
5
Gate-emitter voltage VGE
(V)
Gate-emitter voltage VGE
(V)
VCE – VGE
5 5
VCE – VGE
(V)
Common emitter Tc = 125°C 4 IC = 150 A 3 120 A 90 A 2 60 A
(V)
Common emitter Tc = 70°C 4 IC = 150 A 3 120 A 90 A 2 60 A
VCE
Collector-emitter voltage
1
Collector-emitter voltage
4 5
VCE
1 0
0
0
1
2
3
0
1
2
3
4
5
Gate-emitter voltage VGE
(V)
Gate-emitter voltage VGE
(V)
VGE (OFF) – Tc
(V)
2.0 Common emitter VGE = 5 V IC = 1 mA 5000 3000
C – VCE
Cies
Gate-emitter cut-off voltage VGE (OFF)
1.6
Capacitance C
1.2
(pF)
0.8
1000
300
100 Cres 30
Coes Common emitter VGE = 0 V f = 1 MHz Tc = 25°C 1 3 10 30 100 300 1000
0.4
0 -80
-40
0
40
80
120
160
10
Case temperature Tc
(°C)
Collector-emitter voltage
VCE
(V)
4
2003-03-18
GT8G131
Switching Time – RG
20 Common emitter VCE = 300 V VGE = 4 V 10 IC = 150 A Tc = 25°C 5 toff 500 Common emitter VCE = 300 V 400 RL = 2.0 W Tc = 25°C
VCE, VGE – QG
10
(V)
8
VCE
Collector-emitter voltage
Switching time
300
6
3
200
VGE
4
tf ton 1 10
tr
100 VCE
2
30
50
100
300
0 0
20
40
60
0 80
Gate resistance RG (9)
Gate charge
QG
(nC)
Switching Time – IC
10 800
Maximum Operating Area
(ms)
3
toff tf
(mF)
600
Switching time
1
ton
Main capacitance
CM
400
tr 0.3
Common emitter VCE = 300 V VGE = 4 V RG = 51 W Tc = 25°C
VCM = 350 V 200 Tc < = 70°C VGE = 4 V 20 W < = RG < = 200 W 0
0.1
0
50
100
150
200
0
40
80
120
160
200
Collector current
IC
(A)
Peak collector current
ICP
(A)
Minimum Gate Drive Area
200
(A)
160
ICP
Tc = 25°C 120 70°C 80
Peak collector current
4.