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GT8G131 Dataheets PDF



Part Number GT8G131
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet GT8G131 DatasheetGT8G131 Datasheet (PDF)

GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm · · · · · Supplied in Compact and Thin Package Requires Only a Small Mounting Area 4th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse DC 1 ms Symbol VCES VGES VGES IC ICP PC.

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GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm · · · · · Supplied in Compact and Thin Package Requires Only a Small Mounting Area 4th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse DC 1 ms Symbol VCES VGES VGES IC ICP PC Tj Tstg Rating 400 ±6 ±8 8 150 1.1 150 -55~150 2 Unit V V Collector current A W °C °C Collector power dissipation (Note 1) Junction temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-6J1C Note 1: Drive operation: Mount on glass epoxy board [1 inch ´ 1.5 t] Weight: 0.080 g (typ.) Equivalent Circuit 8 7 6 5 1 2 3 4 These devices are MOS type. Users should follow proper ESD handling procedures. Operating condition of turn-off dv/dt should be lower than 400 V/ms. 1 2003-03-18 GT8G131 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Thermal resistance (Note 2) tf toff Rth (j-a) 2 Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton Test Condition VGE = ±6 V, VCE = 0 VCE = 400 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 150 A, VGE = 4 V VCE = 10 V, VGE = 0, f = 1 MHz 4V 0 2.0 9 51 W Min ¾ ¾ 0.6 ¾ ¾ Typ. ¾ ¾ ¾ 3.0 3800 1.5 1.7 1.9 2.4 ¾ Max ±10 10 1.5 7.0 ¾ Unit mA mA V V pF ¾ ¾ ¾ ¾ ¾ ¾ ¾ ms ¾ VIN: tr < = 100 ns tf < = 100 ns Duty cycle < = 1% ¾ 300 V ¾ 114 °C/W Note 2: Drive operation: Mount on glass epoxy board [1 inch ´ 1.5 t] Marking GT8G131 ※ Type Lot No. ● on lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2003-03-18 GT8G131 IC – VCE 200 Common emitter Tc = -40°C 160 4.5 V VGE = 5 V 200 4.0 V 160 Common emitter Tc = 25°C IC – VCE 4.5 V 4.0 V (A) (A) 3.5 V 3.0 V VGE = 5 V 120 3.5 V IC 120 IC Collector current 80 2.5 V Collector current 3.0 V 80 2.5 V 40 40 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC – VCE 200 Common emitter Tc = 70°C 4.5 V 200 4.0 V 160 Common emitter Tc = 125°C IC – VCE 4.5 V VGE = 5 V 4.0 V (A) (A) 160 VGE = 5 V 3.5 V 3.5 V IC 120 IC Collector current 3.0 V 120 3.0 V 80 2.5 V 40 80 2.5 V 40 0 0 1 2 3 4 5 0 Collector current 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC – VGE 200 5 Common emitter VCE = 5 V 25°C 70°C Common emitter VGE = 4 V 4 VCE (sat) – Tc (A) 160 Collector-emitter saturation voltage VCE (sat) (V) IC = 150 A 3 120 A 2 90 A 60 A 1 IC 120 -40°C Tc = 125°C Collector current 80 40 0 0 1 2 3 4 5 0 -80 -40 0 40 80 120 160 Gate-emitter voltage VGE (V) Case temperature Tc (°C) 3 2003-03-18 GT8G131 VCE – VGE 5 5 VCE – VGE (V) Common emitter Tc = 25°C 4 IC = 150 A 3 120 A 90 A 2 60 A (V) Common emitter Tc = -40°C 4 VCE Collector-emitter voltage 3 120 A 90 A 2 60 A 1 Collector-emitter voltage 5 IC = 150 A VCE 1 0 0 1 2 3 4 0 0 1 2 3 4 5 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) VCE – VGE 5 5 VCE – VGE (V) Common emitter Tc = 125°C 4 IC = 150 A 3 120 A 90 A 2 60 A (V) Common emitter Tc = 70°C 4 IC = 150 A 3 120 A 90 A 2 60 A VCE Collector-emitter voltage 1 Collector-emitter voltage 4 5 VCE 1 0 0 0 1 2 3 0 1 2 3 4 5 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) VGE (OFF) – Tc (V) 2.0 Common emitter VGE = 5 V IC = 1 mA 5000 3000 C – VCE Cies Gate-emitter cut-off voltage VGE (OFF) 1.6 Capacitance C 1.2 (pF) 0.8 1000 300 100 Cres 30 Coes Common emitter VGE = 0 V f = 1 MHz Tc = 25°C 1 3 10 30 100 300 1000 0.4 0 -80 -40 0 40 80 120 160 10 Case temperature Tc (°C) Collector-emitter voltage VCE (V) 4 2003-03-18 GT8G131 Switching Time – RG 20 Common emitter VCE = 300 V VGE = 4 V 10 IC = 150 A Tc = 25°C 5 toff 500 Common emitter VCE = 300 V 400 RL = 2.0 W Tc = 25°C VCE, VGE – QG 10 (V) 8 VCE Collector-emitter voltage Switching time 300 6 3 200 VGE 4 tf ton 1 10 tr 100 VCE 2 30 50 100 300 0 0 20 40 60 0 80 Gate resistance RG (9) Gate charge QG (nC) Switching Time – IC 10 800 Maximum Operating Area (ms) 3 toff tf (mF) 600 Switching time 1 ton Main capacitance CM 400 tr 0.3 Common emitter VCE = 300 V VGE = 4 V RG = 51 W Tc = 25°C VCM = 350 V 200 Tc < = 70°C VGE = 4 V 20 W < = RG < = 200 W 0 0.1 0 50 100 150 200 0 40 80 120 160 200 Collector current IC (A) Peak collector current ICP (A) Minimum Gate Drive Area 200 (A) 160 ICP Tc = 25°C 120 70°C 80 Peak collector current 4.


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