Power MOSFET
Q3-Class HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFK80N50Q3 IXFX80...
Description
Q3-Class HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFK80N50Q3 IXFX80N50Q3
D
G S
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA
EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD Md FC Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
Maximum Ratings
500
V
500
V
30
V
40
V
TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C
IS IDM, VDD VDSS, TJ 150C TC = 25C
80 240
80
5
50 1250
-55 ... +150 150
-55 ... +150
A A A
J
V/ns W
C C C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Torque (TO-264) Mounting Force (PLUS247)
1.13/10 20..120 /4.5..27
Nm/lb.in N/lb
TO-264 PLUS247
10
g
6
g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
500
V
3.5
6.5 V
200 nA
50 A 2 mA
65 m
VDSS =
ID25 =
RDS(on)
trr
500V 80A 65m 250ns
TO-264 (IXFK)
G D S
Tab
PLUS247 (IXFX)
G
D S
Tab
G = Gate D = Drain S = Source Tab = Drain
Features
Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG
Advantages
High Power Density Easy to Mount Space Savings
Applications
DC-DC Converters Battery Chargers Switch-Mode and...
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