Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Description
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G
Benefits l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness l Fully Characterized Capacitance and Avalanche
SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
PD - 96186A
IRFS4010PbF
IRFSL4010PbF
HEXFET® Power MOSFET
D VDSS RDS(on) typ. max.
100V
3.9m: 4.7m:
S ID
180A
DD
S G
D2Pak IRFS4010PbF
S D G
TO-262 IRFSL4010PbF
G Gate
D Drain
S Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited) IAR EAR
dSingle Pulse Avalanche Energy cAvalanche Current fRepetitive Avalanche Energy
Thermal Resistance
Symbol RθJC RθJA
Parameter
jkJunction-to-Case iJunction-to-Ambient (PCB Mount)
www.irf.com
Max. 180 127 720 375 2.5 ± 20 31 -55 to + 175
300
318 See Fig. 14, 15, 22a, 22b,
Typ. –––
–––
Max. 0.40 40
Units
A W W/°C V V/ns
°C
mJ A mJ
Units °C/W
1
07/07/11
IRFS/SL4010PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS ΔV(BR)DSS/ΔTJ RD...
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