IRLB4132PbF

IRLB4132PbF Application Optimized for UPS/Inverter Applications Low Voltage Power Tools Benefits Best in Class Performance for UPS/Inverter Applications Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current Lead-Free, RoHS Compliant D G S Base part number Package Type IRLB4132PbF TO-220AB G Gate Standard Pack Form Tube Quantity 50 HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (Silicon Limited) ID (Package Limited) 30 3.5 4.5 36 150 78A V m nC A GDS TO-220AB D Drain S Source Orderable Part Number IRLB4132PbF Absolute Maximum Rating Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TC = 100°C TJ Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current  Maximum Power Dissipation  Maximum Power Dissipation  Linear Derating Factor Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw Thermal Resistance Symbol Parameter RJC Junction-to-Case  RCS Case-to-Sink, Flat Greased Surface RJA Junction-to-Ambient  Notes through are on page 8 1 Max. 30 ± 20 150 100 78 620 140 68 0.90 -55 to + 175 300 10 lbf·in (1.1 N·m) Typ. ––– 0.50 ––– ...