Document
FQPF16N25C — N-Channel QFET® MOSFET
FQPF16N25C
N-Channel QFET® MOSFET
250 V, 15.6 A, 270 mΩ
Features
• 15.6 A, 250 V, RDS(on) = 270 mΩ (Max) @ VGS = 10 V, ID = 7.8 A
• Low Gate Charge (Typ. 41 nC) • Low Crss (Typ. 68 pF) • 100% Avalanche Tested
November 2013
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D
GDS
TO-220F
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage Drain Current Drain Current
- Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate Above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC RθJA
Parameter Thermal Resistance, Junction to Case, Max Thermal Resistance, Junction to Ambient, Max
S
FQPF16N25C 250 15.6 * 9.8 * 62.4 * ± 30 410 15.6 13.9 5.5 43 0.34
-55 to +150 300
FQPF16N25C 2.89 62.5
Unit V A A A V mJ A mJ
V/ns W
W/°C °C °C
Unit °C/W °C/W
©2004 Fairchild Semiconductor Corporation FQPF16N25C Rev. C1
1
www.fairchildsemi.com
FQPF16N25C — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Device Marking FQPF16N25C
Device FQPF16N25C
Package TO-220F
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Reel Size Tube
Tape Width N/A
Quantity 50 units
Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coeffi/ ΔTJ cient
IDSS
Zero Gate Voltage Drain Current
IGSSF IGSSR
Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 250 V, VGS = 0 V VDS = 200 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V
On Characteristics
VGS(th) RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 μA VGS = 10 V, ID = 7.8 A VDS = 40 V, ID = 7.8 A
Dynamic Characteristics
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 125 V, I.