IXFX32N100P

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK32N100P IXFX32N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (IXFK) Mounting force (IXFX) TO-264 TO-247 Maximum Ratings 1000 1000 ± 30 ± 40 32 75 16 1.5 V V V V A A A J 10 960 -55 ... +150 150 -55 ... +150 300 260 1.13/10 20..120/4.5..27 10 6 V/ns W °C °C °C °C °C Nm/lb.in. Nm/lb. g g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 1000 V 3.5 6.5 V ± 200 nA 50 μA 2.5 mA 320 mΩ VDSS = ID25 = RDS(on) ≤ trr ≤ 1000V 32A 320mΩ 300ns TO-264 (IXFK) G D S (TAB) PLUS247 (IXFX) (TAB) G = Gate S = Source D = Drain TAB = Drain Features z Fast intrinsic diode z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density Applications: z Switched-mode and resonant mode power supplies z DC-DC Converte...