Power MOSFET
Advance Technical Information
PolarTM HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsi...
Description
Advance Technical Information
PolarTM HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFK32N90P IXFX32N90P
VDSS ID25
RDS(on)
= 900V = 32A < 300mΩ
TO-264 (IXFK)
Symbol VDSS VDGR VGSS VGSM ID25 IDM
IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD
Md FC
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247
Maximum Ratings 900 900
±30 ±40
32 80
16 2
V V
V V
A A
A J
15
960
-55 to +150 150
-55 to +150
300 260
1.13/10 20..120 /4.5..27
10 6
V/ns
W
°C °C °C °C °C Nm/lb.in. N/lb.
g g
G D S
PLUS247 (IXFX)
Tab
G DS
Tab
G = Gate S = Source
D = Drain Tab = Drain
Features
z Low RDS(on) and QG z Avalanche Rated z Low Package Inductance z Fast Intrinsic Rectifier
Advantages
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ±30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
900 V
3.5 6.5 V
±200 nA
25 μA 2 mA
300 mΩ
z High Power Density z Easy to Mount z Space Savings
Applications
z Switch-Mode and Resonant-Mode Power Supplies
z DC-DC Converters z Laser Drivers z AC and DC Motor Drives z Robotics and Servo Co...
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