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BR24S128-W Dataheets PDF



Part Number BR24S128-W
Manufacturers Rohm
Logo Rohm
Description Standard EEPROM
Datasheet BR24S128-W DatasheetBR24S128-W Datasheet (PDF)

Datasheet Serial EEPROM series Standard EEPROM I2C BUS EEPROM (2-Wire) BR24Sxxx-W (8K 16K 32K 64K 128K 256K) ●General Description BR24Sxxx-W is a serial EEPROM of I2C BUS interface method ●Features „ Completely conforming to the world standard I2C BUS. All controls available by 2 ports of serial clock (SCL) and serial data (SDA) „ Other devices than EEPROM can be connected to the same port, saving microcontroller port „ 1.7V to 5.5V single power source action most suitable for battery us.

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Datasheet Serial EEPROM series Standard EEPROM I2C BUS EEPROM (2-Wire) BR24Sxxx-W (8K 16K 32K 64K 128K 256K) ●General Description BR24Sxxx-W is a serial EEPROM of I2C BUS interface method ●Features „ Completely conforming to the world standard I2C BUS. All controls available by 2 ports of serial clock (SCL) and serial data (SDA) „ Other devices than EEPROM can be connected to the same port, saving microcontroller port „ 1.7V to 5.5V single power source action most suitable for battery use „ FAST MODE 400kHz at 1.7V to 5.5V „ Page write mode useful for initial value write at factory shipment „ Highly reliable connection by Au pad and Au wire „ Auto erase and auto end function at data rewrite „ Low current consumption ¾ At write operation (5V) : 0.5mA (Typ.) ¾ At read operation (5V) : 0.2mA (Typ.) ¾ At standby operation (5V) : 0.1μA (Typ.) „ Write mistake prevention function ¾ Write (write protect) function added ¾ Write mistake prevention function at low voltage „ Data rewrite up to 1,000,000 times „ Data kept for 40 years „ Noise filter built in SCL / SDA terminal „ Shipment data all address FFh ●Packages W(Typ.) x D(Typ.) x H(Max.) SOP8 5.00mm x 6.20mm x 1.71mm TSSOP-B8 3.00mm x 6.40mm x 1.20mm SOP- J8 4.90mm x 6.00mm x 1.65mm TSSOP-B8J 3.00mm x 4.90mm x 1.10mm SSOP-B8 3.00mm x 6.40mm x 1.35mm MSOP8 2.90mm x 4.00mm x 0.90mm VSON008X2030 2.00mm x 3.00mm x 0.60mm ●Page write Number of pages Product number 16Byte BR24S08-W BR24S16-W 32Byte BR24S32-W BR24S64-W 64Byte BR24S128-W BR24S256-W ●BR24Sxxx-W Capacity Bit format Type Power source voltage 8Kbit 1K×8 BR24S08-W 1.7V to 5.5V 16Kbit 2K×8 BR24S16-W 1.7V to 5.5V 32Kbit 4K×8 BR24S32-W 1.7V to 5.5V 64Kbit 8K×8 BR24S64-W 1.7V to 5.5V 128Kbit 16K×8 BR24S128-W 1.7V to 5.5V 256Kbit 32K×8 BR24S256-W 1.7V to 5.5V SOP8 ● ● ● ● ● ● SOP-J8 ● ● ● ● ● ● SSOP-B8 TSSOP-B8 ●● ●● ●● ●● ●● MSOP8 TSSOP-B8J VSON008 X2030 ●●● ●●● ●●● ●● ○Product structure:Silicon monolithic integrated circuit www.rohm.com ©2012 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 ○This product is not designed protection against radioactive rays 1/33 TSZ02201-0R2R0G100320-1-2 20.AUG.2012 Rev.001 BR24Sxxx-W (8K 16K 32K 64K 128K 256K) Datasheet ●Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Ratings Supply Voltage VCC -0.3 to +6.5 450 (SOP8) 450 (SOP-J8) 300 (SSOP-B8) Power Dissipation Pd 330 (TSSOP-B8) 310 (TSSOP-B8J) 310 (MSOP8) 300 (VSON008X2030) Storage Temperature Tstg -65 to +125 Operating Temperature Topr -40 to +85 Terminal Voltage ‐ -0.3 to Vcc+1.0 Unit V mW ℃ ℃ V Remarks When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃. When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃. When using at Ta=25℃ or higher 3.0mW to be reduced per 1℃. When using at Ta=25℃ or higher 3.3mW to be reduced per 1℃. When using at Ta=25℃ or higher 3.1mW to be reduced per 1℃. When using at Ta=25℃ or higher 3.1mW to be reduced per 1℃. When using at Ta=25℃ or higher 3.0mW to be reduced per 1℃. ●Memory cell characteristics (Ta=25℃, Vcc=1.7V to 5.5V) Parameter Number of data rewrite times *1 Data hold years *1 Min. 1,000,000 40 Limits Typ. - *1 Not 100% TESTED ●Recommended Operating Ratings Parameter Symbol Power source voltage Vcc Input voltage VIN Ratings 1.7 to 5.5 0 to Vcc Max. - Unit Times Years Unit V ●Electrical Characteristics (Unless otherwise specified, Ta=-40℃ to +85℃, VCC=1.7V to 5.5V) Parameter Symbol Min Limits Typ. Max. Unit "H" Input Voltage1 VIH1 0.7Vcc - Vcc+1.0 V Condition "L" Input Voltage1 VIL1 -0.3 - 0.3Vcc V "L" Output Voltage1 VOL1 - - 0.4 V IOL=3.0mA , 2.5V≦Vcc≦5.5V (SDA) "L" Output Voltage2 VOL2 - - 0.2 V IOL=0.7mA , 1.7V≦Vcc≦2.5V (SDA) Input Leakage Current ILI -1 - 1 μA VIN=0 to Vcc Output Leakage Current ILO -1 - 1 μA VOUT=0 to Vcc (SDA) - - 2.0 Vcc=5.5V , fSCL =400kHz, tWR=5ms Byte Write, Page Write BR24S08/16/32/64-W ICC1 mA Current consumption at action - - 2.5 Vcc=5.5V , fSCL =400kHz, tWR=5ms Byte Write, Page Write BR24S128/256-W ICC2 - - 0.5 mA Vcc=5.5V , fSCL =400kHz Random read, Current read, Sequential read Standby Current ISB - - 2.0 μA Vcc=5.5V , SDA・SCL=Vcc A0, A1, A2=GND, WP=GND www.rohm.com ©2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/33 TSZ02201-0R2R0G100320-1-2 20.AUG.2012 Rev.001 BR24Sxxx-W (8K 16K 32K 64K 128K 256K) Datasheet ●Action timing characteristics (Unless otherwise specified, Ta=-40℃ to +85℃, VCC=1.7V to 5.5V) Parameter SCL Frequency Data clock "High" time Data clock "Low" time SDA, SCL rise time *1 SDA, SCL fall time *1 Start condition hold time Start condition setup time Input data hold time Input data setup time Output data delay time Output data hold time Stop condition data setup time Bus release time before transfer start Internal write cycle time Noise removal valid period (SDA,SCL terminal) WP hold time WP setup time WP valid time *1 : Not 100% TESTED *2 : BR24S16/64-W : 1.0μs. ●.


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