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MXP4004BT Dataheets PDF



Part Number MXP4004BT
Manufacturers MaxPower Semiconductor
Logo MaxPower Semiconductor
Description 40V N-Channel MOSFET
Datasheet MXP4004BT DatasheetMXP4004BT Datasheet (PDF)

40V N-Channel MOSFET MXP4004BT/BE Datasheet Applications: z Power Supply z DC-DC Converters Features: z LeadFree z Low RDS(ON) to Minimize Conductive Loss z Low Gate Change for Fast Switching Application z Optimized BVDSS Capability VDSS 40 V RDS(ON) (Max) 4.0 mΩ IDa 173 A Ordering Information Part Number Package Brand MXP4004BT TO220 MXP MXP4004BE TO263 Absolute Maximum Ratings Tc=25℃ unless otherwise specified Symbol MXP Parameter TO-263 Value Units VDS Drain-to-Source Volta.

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40V N-Channel MOSFET MXP4004BT/BE Datasheet Applications: z Power Supply z DC-DC Converters Features: z LeadFree z Low RDS(ON) to Minimize Conductive Loss z Low Gate Change for Fast Switching Application z Optimized BVDSS Capability VDSS 40 V RDS(ON) (Max) 4.0 mΩ IDa 173 A Ordering Information Part Number Package Brand MXP4004BT TO220 MXP MXP4004BE TO263 Absolute Maximum Ratings Tc=25℃ unless otherwise specified Symbol MXP Parameter TO-263 Value Units VDS Drain-to-Source Voltage IDa Continuous Drain Current (TC=25℃) IDM Pulsed Drain Current @VG=10V EAS Single Pulse Avalanche Energy (L=1mH) 40 V 173 A 693 724 mJ IAS Pulsed Avalanche Energy Figure.9 A TJ and TSTG Operating Junction and Storage Temperature Range -55 to 175 ℃ a. Calculated continuous current based upon maximum allowable junction temperature, +175℃. Package limitation current is 80A. OFF Characteristics TJ=25℃ unless otherwise specified Symbol Parameter BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current Gate-to-Source Forward IGSS Leakage Gate-to-Source Reverse Leakage ©MaxPower Semiconductor Inc. Min Typ Max Units Test Conditions 40 V VGS=0V, ID=250µA 1 µA VDS=32V, VGS=0V 100 VDS=32V, VGS=0V TJ=125 ℃ 100 VGS=+20V nA 100 VGS= -20V 1 MXP4004BT Rev 1.0, Sep 2011 ON Characteristics TJ=25℃ unless otherwise specified Symbol Parameter Min Typ Max Units Test Conditions RDS(ON) Static Drain-to-Source On-Resistance 2.5 4 mΩ VGS= 10V, ID=24A VGS(TH) Gate Threshold Voltage 2 4 V VDS=VGS, ID=250µA Dynamic Characteristics Essentially independent of operating temperature Symbol Parameter Min Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain (“Miller”) Charge td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Typ 5016 787 292 70 24 24 19 67 49 31 Max Units Test Conditions pF VGS=0V, VDS=20V, f=1.0MHz nC VDD=20V, ID=86A, VG=10V ns VDD=20V, ID=86A, VG=10V, RG=4.7Ω Source-Drain Diode Characteristics Tc=25℃ unless otherwise specified Symbol Parameter Min Typ Max Units Test Conditions VSD Diode Forward Voltage 1.2 V IS=24A, VGS=0V Trr Reverse Recovery Time 51 77 ns Qrr Reverse Recovery Charge IS=38A, di/dt = 100A/μs 35 53 nC Published by MaxPower Semiconductor Inc. 4800 Great America Parkway, Suite# 205, Santa Clara, CA 95054 ©MaxPower Semiconductor Inc. 2 All Rights Reserved. MXP4004BT Rev 1.0, Sep 2011 PD, Power Dissipation(W) Figure 1. Maximum Power Dissipation V.S Case Temperature 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC, Case Temperature(℃) ID, Drain Current(A) Figure 3. Typical Output Characteristics 30 VGS=10, 9…7 V 25 VGS=6 V 20 15 10 5 0 0 VGS=5 V 0.5 1 1.5 VDS, Drain-to Source Voltage(A) 2 Vth, Threshold Voltage (Normalized) Figure 5. Threshold Voltage V.S Junction Te mpe rature 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.00 -75 -25 25 75 125 TJ, Junction Temperature(℃) 175 ©MaxPower Semiconductor Inc. 3 RDS(ON), Drain-to-Source Resistance (Normalized) Drain-to-Source Breakdown Voltage (Normalized) ID, Drain Current(A) Figure 2. Maximum Continuous Drain Current V.S Case Temperature 180 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC, Case Temperature(℃) Figure 4. Breakdown Voltage V.S Junction Temperature 1.13 1.08 1.03 0.98 0.93 0.88 -75 -25 25 75 125 TJ, Junction Temperature(℃) 175 Figure 6. Drain-to-Source Resistance V.S Junction Temperature 1.80 1.60 1.40 1.20 1.00 0.80 0.60 -75 -25 25 75 125 TJ, Junction Temperature(℃) 175 MXP4004BT Rev 1.0, Sep 2011 VGS. Gate-to-Source Voltage(V Figure 7. Typical Gate Charge vs. Gate-toSource Voltage 10 9 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 QG, Gate Charge(nC) 70 C, Capacitance(pF) Figure 8. Typical Capacitance vs. Drain-toSource Voltage 7000 6000 5000 CISS 4000 3000 2000 1000 0 0 COSS CRSS 10 20 30 VDS, Drain Voltage(V) 40 Figure 9. Unclamped Inductive Switching Capability 1000 Starting TJ=25oC 100 Figure 10. Source-Drain Diode Forward Voltage 100 10 TJ=175oC 1 TJ=25oC 10 ISD, Reverse Drain Current(A) 1 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 tAV, Time in Avalanche(s) 1.E+00 0 0.00 0.40 0.80 VSD, Source-to-Drain Voltage(V) 1.20 IAS, Avalanche Current(A) ©MaxPower Semiconductor Inc. 4 MXP4004BT Rev 1.0, Sep 2011 Disclaims: MaxPower Semiconductor Inc. (MXP) reserves the right to make changes without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. All products are sold subject to MXP's terms and conditions supplied at the time of order acknowledgement. MaxPower Semiconductor Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf, disclaim a.


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