Document
40V N-Channel MOSFET
MXP4004BT/BE Datasheet
Applications:
z Power Supply z DC-DC Converters
Features:
z LeadFree z Low RDS(ON) to Minimize Conductive Loss z Low Gate Change for Fast Switching Application z Optimized BVDSS Capability
VDSS 40 V
RDS(ON) (Max) 4.0 mΩ
IDa 173 A
Ordering Information
Part Number
Package
Brand
MXP4004BT
TO220
MXP
MXP4004BE
TO263
Absolute Maximum Ratings
Tc=25℃ unless otherwise specified
Symbol
MXP
Parameter
TO-263
Value
Units
VDS Drain-to-Source Voltage
IDa
Continuous Drain Current
(TC=25℃)
IDM Pulsed Drain Current @VG=10V
EAS Single Pulse Avalanche Energy (L=1mH)
40 V 173
A 693 724 mJ
IAS Pulsed Avalanche Energy
Figure.9
A
TJ and TSTG Operating Junction and Storage Temperature Range
-55 to 175
℃
a. Calculated continuous current based upon maximum allowable junction temperature, +175℃. Package limitation current is 80A.
OFF Characteristics
TJ=25℃ unless otherwise specified
Symbol
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward
IGSS
Leakage Gate-to-Source Reverse
Leakage
©MaxPower Semiconductor Inc.
Min Typ Max Units
Test Conditions
40 V VGS=0V, ID=250µA
1 µA VDS=32V, VGS=0V 100 VDS=32V, VGS=0V TJ=125 ℃
100 VGS=+20V nA
100 VGS= -20V
1 MXP4004BT Rev 1.0, Sep 2011
ON Characteristics
TJ=25℃ unless otherwise specified
Symbol
Parameter
Min Typ Max Units
Test Conditions
RDS(ON)
Static Drain-to-Source On-Resistance
2.5 4 mΩ VGS= 10V, ID=24A
VGS(TH)
Gate Threshold Voltage 2
4 V VDS=VGS, ID=250µA
Dynamic Characteristics
Essentially independent of operating temperature
Symbol
Parameter
Min
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain (“Miller”) Charge
td(on)
Turn-on Delay Time
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Typ
5016 787 292
70 24 24
19 67 49 31
Max Units
Test Conditions
pF VGS=0V, VDS=20V, f=1.0MHz
nC VDD=20V, ID=86A, VG=10V
ns VDD=20V, ID=86A, VG=10V, RG=4.7Ω
Source-Drain Diode Characteristics
Tc=25℃ unless otherwise specified
Symbol
Parameter
Min Typ Max Units
Test Conditions
VSD Diode Forward Voltage
1.2 V
IS=24A, VGS=0V
Trr
Reverse Recovery Time
51 77 ns
Qrr
Reverse Recovery Charge
IS=38A, di/dt = 100A/μs 35 53 nC
Published by
MaxPower Semiconductor Inc.
4800 Great America Parkway, Suite# 205, Santa Clara, CA 95054
©MaxPower Semiconductor Inc.
2
All Rights Reserved.
MXP4004BT Rev 1.0, Sep 2011
PD, Power Dissipation(W)
Figure 1. Maximum Power Dissipation V.S Case Temperature
160 140 120 100 80 60 40 20
0 0
25 50 75 100 125 150 175
TC, Case Temperature(℃)
ID, Drain Current(A)
Figure 3. Typical Output Characteristics
30
VGS=10, 9…7 V
25
VGS=6 V
20
15
10 5
0 0
VGS=5 V
0.5 1 1.5
VDS, Drain-to Source Voltage(A)
2
Vth, Threshold Voltage (Normalized)
Figure 5. Threshold Voltage V.S Junction Te mpe rature
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00 -75
-25 25 75 125 TJ, Junction Temperature(℃)
175
©MaxPower Semiconductor Inc.
3
RDS(ON), Drain-to-Source Resistance (Normalized)
Drain-to-Source Breakdown Voltage (Normalized)
ID, Drain Current(A)
Figure 2. Maximum Continuous Drain Current V.S Case Temperature
180 160 140 120 100 80 60 40 20
0 0
25 50
75 100 125 150 175
TC, Case Temperature(℃)
Figure 4. Breakdown Voltage V.S Junction Temperature
1.13
1.08
1.03
0.98
0.93
0.88 -75
-25 25 75 125
TJ, Junction Temperature(℃)
175
Figure 6. Drain-to-Source Resistance V.S Junction Temperature
1.80
1.60
1.40
1.20
1.00
0.80
0.60 -75
-25 25 75 125 TJ, Junction Temperature(℃)
175
MXP4004BT Rev 1.0, Sep 2011
VGS. Gate-to-Source Voltage(V
Figure 7. Typical Gate Charge vs. Gate-toSource Voltage
10
9 8
7 6
5
4 3
2 1
0 0 10 20 30 40 50 60 QG, Gate Charge(nC)
70
C, Capacitance(pF)
Figure 8. Typical Capacitance vs. Drain-toSource Voltage
7000
6000 5000
CISS
4000
3000
2000
1000
0 0
COSS
CRSS
10 20 30 VDS, Drain Voltage(V)
40
Figure 9. Unclamped Inductive Switching Capability
1000
Starting TJ=25oC
100
Figure 10. Source-Drain Diode Forward Voltage
100
10 TJ=175oC
1 TJ=25oC
10
ISD, Reverse Drain Current(A)
1 1.E-05
1.E-04 1.E-03 1.E-02 1.E-01
tAV, Time in Avalanche(s)
1.E+00
0 0.00
0.40 0.80 VSD, Source-to-Drain Voltage(V)
1.20
IAS, Avalanche Current(A)
©MaxPower Semiconductor Inc. 4 MXP4004BT Rev 1.0, Sep 2011
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