MXP4004AT

40V N-Channel MOSFET MXP4004AT Datasheet Applications:  Power Supply  DC-DC Converters Features:  LeadFree  Low RDS(ON) to Minimize Conductive Loss  Low Gate Change for Fast Switching Application  Optimized BVDSS Capability Ordering Information Part Number Package MXP4004AT TO220 Brand MXP VDSS 40 V RDS(ON) (Max) 4.0 mΩ IDa 158 A Absolute Maximum Ratings Tc=25℃ unless otherwise specified Symbol Parameter Value Units VDS Drain-to-Source Voltage IDa Continuous Drain Current (TC=25℃) 40 V 158 A EAS Single Pulse Avalanche Energy (L=11.9mH) 960 mJ IAS Pulsed Avalanche Energy Figure.9 A TJ and TSTG Operating Junction and Storage Temperature Range -55 to 175 ℃ a. Calculated continuous current based upon maximum allowable junction temperature, +175℃. Package limitation current is 80A. OFF Characteristics TJ=25℃ unless otherwise specified Symbol Parameter BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current Gate-to-Source Forward IGSS Leakage Gate-to-Source Reverse Leakage ©MaxPower Semiconductor Inc. Min Typ Max Units Test Conditions 40 V VGS=0V, ID=250µA 1 VDS=32V, VGS=0V µA 100 VDS=32V, VGS=0V TJ=125 ℃ 100 VGS=+20V nA 100 VGS= -20V 1 MXP4004AT Rev 1.0, May 2011 ON Characteristics TJ=25℃ unless otherwise specified Symbol Parameter Min Typ Max Units Test Conditions RDS(ON) Static Drain-to-Source On-Resistance 4 mΩ VGS= 10V, ID=24A VGS(TH) Gate Threshold Voltage 2 4 V VDS=VGS, ID=250µA Dynamic Ch...