MXP4004BTS

40V N-Channel MOSFET Applications: ● Power Supply ● DC-DC Converters ● DC-AC Inverters Features: ● Lead Free ● Low RDS(ON) to Minimize Conductive Loss ● Low Gate Charge for Fast Switching Application ● Optimized V(BR)DSS Ruggedness MXP4004BTS VDS 40V RDS(ON)(MAX) 3mΩ ID 170A Ordering Information Park Number Package MXP4004BTS TO220 Brand MXP TO220 Pin Definition and Inner Circuit Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-to-Source Voltage 40 ID Continuous Drain Current Silicon Limited Package Limited 170 80 IDM Pulsed Drain Current @VGS=10V 679 PD Power Dissipation 231 VGS Gate-to-Source Voltage +/-20 TJ and Tstg Operating Junction and Storage Temperature Range -55 to 175 Unit V A W V ℃ Avalanche Characteristics Symbol Parameter EAS① Single Pulse Avalanche Energy (VDS=20V, VGS=10V, Rg=25Ω, L=1mH) IAS Single Pulse Avalanche Current TC=25℃ unless otherwise specified Value 200 Figure 9 Unit mJ A Thermal Resistance Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Max Unit 0.65 ℃/W 62 ℃/W ① : Guarantee number. ©MaxPower Semiconductor Inc. Page1 MXP4004BTS Preliminary Dec. 2011 40V N-Channel MOSFET MXP4004BTS OFF Characteristics Symbol Parameter TJ=25℃ unless otherwise specified Min Typ Max Unit V(BR)DSS Drain-to-Source Breakdown Voltage 40 - -V IDSS Drain-to-Source Leakage Current - - 1 100 uA IGSS Gate-to-Source F...