IXFM10N90

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM10N90 IXFH/IXFM12N90 IXFH13N90 V DSS 900 V 900 V 900 V I D25 10 A 12 A 13 A trr £ 250 ns R DS(on) 1.1 W 0.9 W 0.8 W Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS VDGR V GS VGSM ID25 IDM IAR EAR dv/dt PD T J TJM T stg TL Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Mounting torque 10N90 12N90 13N90 10N90 12N90 13N90 10N90 12N90 13N90 900 V 900 V ±20 V ±30 V 10 A 12 A 13 A 40 A 48 A 13 A 10 A 12 A 13 A 30 mJ 5 V/ns 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g TO-204 AA (IXFM) (TAB) G D G = Gate, S = Source, D = Drain, TAB = Drain Features l International standard packages l Low R HDMOSTM process DS (on) l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic Rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 10N90 12N90 13N90 Pulse test, t £ 300 ms, d...