www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3PML package ·High voltage...
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon
NPN Power
Transistors
DESCRIPTION ·With TO-3PML package ·High voltage switching
APPLICATIONS
·Display horizontal deflection output; switching
regulator general purpose
PINNING PIN 1 2 3
DESCRIPTION Base Collector Emitter
Product Specification
2SC5002
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO VCEO VEBO
IC ICM IB
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current
PC Collector power dissipation
Tj Junction temperature Tstg Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25
VALUE 1500 800 6 7 14 3.5 80 150
-55~150
UNIT V V V A A A
W
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon
NPN Power
Transistors
Product Specification
2SC5002
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
VCEsat Collector-emitter saturation voltage IC=5A;IB=1.2A
VBEsat
Base-emitter saturation voltage
IC=5A;IB=1.2A
ICBO1
Collector cut-off current
VCB=1200V ;IE=0
ICBO2 IEBO hFE-1 hFE-2 fT
Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency
VCB=1500V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IE=-0.5A ; VCE=12V
COB Output capacitance
VCB=10V;f=1MHz
Switching times
tstg Storage time tf Fall time
IC=4A;IB1=0.8A; IB2=-1.6A;RL=50A ...