BDX85A

isc Silicon NPN Darlington Power Transistor BDX85/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 750(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A 80V(Min)- BDX85B; 100V(Min)- BDX85C ·Complement to Type BDX86/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX85 45 BDX85A 60 VCBO Collector-Base Voltage BDX85B 80 BDX85C 100 BDX85 45 BDX85A 60 VCEO Collector-Emitter Voltage BDX85B 80 BDX85C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 10 ICM Collector Current-Peak 15 IB Base Current 100 PC Collector Power Dissipation @ TC=25℃ 100 TJ Junction Temperature 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A mA W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.75 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDX85/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX85 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX85A BDX85B IC= 50mA; IB= 0 VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on) ICBO BDX85C Collector-Emitter Voltage Collector-Emitter Voltage Saturation Saturation Base-Emitter Saturation Voltage ...