BDX53F

BDX53F ® BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES s MONOLITHIC DARLINGTON CONFIGURATION s INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDX53F is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDX54F. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCBO Collector-Base Voltage (IE = 0) VCEO Collector-Emitter Voltage (IB = 0) VEBO Emitter-base Voltage (IC = 0) IC Collector Current ICM Collector Peak Current IB Base Current Ptot Total Dissipation at Tc ≤ 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature For PNP types voltage and current values are negative. NPN PNP October 2003 R1 Typ. = 10 KΩ R2 Typ. = 150 Ω Value BDX53F BDX54F 160 160 5 8 12 0.2 60 -65 to 150 150 Unit V V V A A A W oC oC 1/4 BDX53F / BDX54F THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 2.08 70 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEO Collector Cut-off Current (IE = 0) ICBO Collector Cut-off Current (IB = 0) IEBO Emitter Cut-off Current (IC = 0) VCEO(sus...