BDX53F

isc Silicon NPN Darlington Power Transistor BDX53F DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain- : hFE= 500(Min)@ IC= 2A ·Complement to Type BDX54F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCER Collector-Emitter Voltage 160 VCEO Collector-Emitter Voltage 160 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 ICM Collector Current-Peak 12 IB Base Current-Continuous 0.2 PC Collector Power Dissipation @ TC=25℃ 60 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 10mA VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 10mA VECF C-E Diode Forward Voltage IF= 2A ICEO Collector Cutoff Current VCE= 80V; IB= 0 ICBO Collector Cutoff Current VCB= 160V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC ...