BDX53F

TIGER ELECTRONIC CO.,LTD Complementary Silicon Power Darlington Ttransistors Product specification BDX53F / BDX54F DESCRIPTION The BDX53F are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. The complementary PNP types are BDX54F respectively. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Symbol Value Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 5V Collector Current IC 8.0 A Base Current IB 0.2 A Total Dissipation at Max. Operating Junction Temperature Storage Temperature Ptot 60 W Tj 150 oC Tstg -55~150 oC TO-220 ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Symbol Test Conditions Collector Cut-off Current ICBO VCB=160V, IE=0 Collector Cut-off Current ICEO VCE=80V, IB=0 Emitter Cut-off Current IEBO VEB=5.0V, IC=0 Collector-Emitter Sustaining Voltage DC Current Gain VCEO hFE IC=50mA, IB=0 VCE=5V, IC=2.0A Collector-Emitter Saturation Voltage VCE(sat) IC=2.0A,IB=10mA Base-Emitter Saturation Voltage VBE(sat) IC=2.0A,IB=10mA Parallel-diode Forward Voltage VF IF=2A Min. — — — 160 500 — — — Typ. — — — — — — — — Max. Unit 0.2 mA 0.5 mA 2.0 mA —V — 2.0 V 2.5 V 2.5 V ...