TIGER ELECTRONIC CO.,LTD
Complementary Silicon Power Darlington Ttransistors
Product specification
BDX53F / BDX54F
DE...
TIGER ELECTRONIC CO.,LTD
Complementary Silicon Power Darlington T
transistors
Product specification
BDX53F / BDX54F
DESCRIPTION
The BDX53F are silicon Epitaxial-Base
NPN power
transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. The complementary
PNP types are BDX54F respectively.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
VCBO
160 V
Collector-Emitter Voltage
VCEO
160 V
Emitter-Base Voltage
VEBO
5V
Collector Current
IC 8.0 A
Base Current
IB 0.2 A
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
Ptot 60 W Tj 150 oC Tstg -55~150 oC
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Symbol Test Conditions
Collector Cut-off Current
ICBO VCB=160V, IE=0
Collector Cut-off Current
ICEO VCE=80V, IB=0
Emitter Cut-off Current
IEBO VEB=5.0V, IC=0
Collector-Emitter Sustaining Voltage DC Current Gain
VCEO hFE
IC=50mA, IB=0 VCE=5V, IC=2.0A
Collector-Emitter Saturation Voltage VCE(sat) IC=2.0A,IB=10mA
Base-Emitter Saturation Voltage
VBE(sat) IC=2.0A,IB=10mA
Parallel-diode Forward Voltage
VF IF=2A
Min. — — — 160 500 — — —
Typ. — — — — — — — —
Max. Unit 0.2 mA 0.5 mA 2.0 mA —V — 2.0 V 2.5 V 2.5 V
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