A928

ST 2SA928 PNP Silicon Epitaxial Planar Transistor for audio power amplifier The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC 2 Ptot 1 Tj 150 Tstg 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Value 30 30 5 - 55 to + 150 Unit V V V A W OC OC Characteristics at Ta = 25 OC Parameter Symbol DC Current Gain at -VCE = 2 V, -IC = 500 mA Current Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 5 V Gain Group O Y hFE hFE -ICBO - -IEBO Collector Base Breakdown Voltage at -IC = 100 µA -V(BR)CBO Collector Emitter Breakdown Voltage at -IC = 10 mA -V(BR)CEO Emitter Base Breakdown Voltage at -IE = 1 mA -V(BR)EBO Collector Emitter Saturation Voltage at -IC = 1.5 A, -IB = 30 mA -VCE(sat) Base Emitter Voltage at -VCE = 2 V, -IC = 500 mA -VBE - Gain Bandwidth Product at VCE = 2 V, IC = 500 mA fT - Collector Output Capacitance at VCB = 10 V, f = 1 MHz Cob Min. Typ. 100 160 - -30 - 30 - 5 --- 120 - 48 - Max. 200 320 100 100 2 1 - Unit nA nA V V V V V MHz pF Dated : 07/12/2002 http://www.Datasheet4U.com ...