isc Silicon NPN Power Transistor
2SC3747
DESCRIPTION ·Good Linearity of hFE ·High Switching Speed ·Low Collector Satur...
isc Silicon
NPN Power
Transistor
2SC3747
DESCRIPTION ·Good Linearity of hFE ·High Switching Speed ·Low Collector Saturation Voltage ·Complement to Type 2SA1470 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Inductance, lamp drivers ·Inverters, converters ·Power amplifiers ·High-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Pulse
Collector Power Dissipation
@TC=25℃ PC
Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
10
A
25 W
2.0
150
℃
Tstg
Storage Temperature
-55~150 ℃
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 0.175A
ICBO
Collector Cutoff Current
VCB= 40V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 3A , IB1= -IB2= 0.1...