isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min) ·High DC Cur...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min) ·High DC Current Gain-
: hFE= 100(Min)@ (VCE= -2V , IC= -1A) ·Low Saturation Voltage-
: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·This type of power
transistor is developed for high-speed
switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7.0
V
IC
Collector Current-Continuous
-5.0
A
ICM
Collector Current-Pulse
-10
A
IB
Base Current-Continuous
-2.5
A
Total Power Dissipation @TC=25℃
25
PT
W
Total Power Dissipation @Ta=25℃
2.0
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
2SA1441
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -3.0A ; IB= -0.3A, L= 1mH
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.2A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= -3A; IB= -0.15A
VBE(sat)-2 Base-Emitter Saturation Volt...