A1441

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1441 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -1A) ·Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -3A, IB=B -0.15A) APPLICATIONS ·This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. i.cnABSOLUTE MAXIMUM RATINGS(Ta=25℃) .iscsemSYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V wwwVCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -5.0 A ICM Collector Current-Pulse -10 A IBB Base Current-Continuous -2.5 A Total Power Dissipation @TC=25℃ 25 PT Total Power Dissipation @Ta=25℃ 2.0 W TJ Junction Temperature Tstg Storage Temperature 150 -55~150 ℃ ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1441 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) VCEX(SUS) VCE(sat)-1 Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage IC= -3.0A ; IB= -0.3A, L= 1mH IC= -3.0A ; IB1=-IB2= -0.3A, VBE(OFF)=1.5V, L=180μH,clamped IC= -3A; IB=B -0.15A -60 -60 VCE(sat)-2 Collector-Emitter Saturation Voltage ...