K1808

2SK1808 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SK1808 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 900 ±30 4 10 4 35 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1808 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 900 Gate to source breakdown voltage V(BR)GSS ±30 Gate to source leak current IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance — — 2.0 — Forward transfer admittance |yfs| 1.7 Typ — — — — — 3.0 2.7 Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr — — — — — — — — — 740 305 150 15 60 100 80 0.9 800 Max Unit —V —V ±10 µA 250 µA 3.0 V 4.0 Ω —S — pF — pF — pF — ns — ns — ns — n...