K1808 Datasheet: 2SK1808





K1808 2SK1808 Datasheet

Part Number K1808
Description 2SK1808
Manufacture Hitachi Semiconductor
Total Page 6 Pages
PDF Download Download K1808 Datasheet PDF

Features: 2SK1808 Silicon N-Channel MOS FET Applic ation High speed power switching Featur es • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for s witchingregulator, DC-DC converter Outl ine TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SK1808 Absolute Maximum Ratings (Ta = 25°C) Item Drain to sou rce voltage Gate to source voltage Drai n current Drain peak current Body to dr ain diode reverse drain current Channel dissipation Channel temperature Storag e temperature Notes 1. PW ≤ 10 µs, d uty cycle ≤ 1 % 2. Value at Tc = 25 C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 900 ±30 4 10 4 35 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1808 Electrical Ch aracteristics (Ta = 25°C) Item Symbo l Min Drain to source breakdown voltag e V(BR)DSS 900 Gate to source breakd own voltage V(BR)GSS ±30 Gate to so urce leak current IGSS Zero gate voltag e drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on s.

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2SK1808
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator, DC-DC converter
Outline
TO-220FM
D 12 3
1. Gate
G 2. Drain
3. Source
S

                 






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