2SC4002

2SC4002 Ordering number : ENN2960A 2SC4002 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features High breakdown voltage. Adoption of MBIT process. Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta=25°C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO hFE VCB=300V, IE=0 VEB=4V, IC=0 VCE=10V, IC=50mA Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage fT VCE(sat) VCE=30V, IC=10mA IC=50mA, IB=5mA Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage VBE(sat) IC=50mA, IB=5mA V(BR)CBO IC=10µA, IE=0 Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance V(BR)CEO V(BR)EBO Cob IC=1mA, RBE=∞ IE=10µA, IC=0 VCB=30V, f=1MHz Reverse Transfer Capacitance Cre * : The 2SC4002 is classified by 50mA hFE as follows : VCB=30V, f=1MHz Rank D E hFE 60 to 120 100 to 200 Ratings Unit 400 V 400 V 5 V 200 mA 400 mA 600 mW 150 °C --55 to +150 °C min 60* 400 400 5 Ratings Unit typ max 0.1 µA 0.1 µA 200* 70 MHz 0.6 V 1.0 V V V V 4 pF 3 pF Continued on next page. © 2011, SCILLC. Al...